K. Yamauchi, K. Yamamura, H. Mimura, Y. Sano, A. Saito, K. Ueno K. Endo, A. Souvorov, M. Yabashi, K. Tamasaku, T. Ishikawa, and Y. Mori
Microstitching interferometry for x-ray reflective optics
Rev. Sci. Instrum., 74, 2894-2 898 (2003).

Y. Fujimoto and K. Hirose
First-principles treatments of electron transport properties for nanoscale junctions
Phys. Rev. B, 67, 195315 1-12 (2003).

森 勇藏, 佐野泰久, 山村和也, 森田論, 森田瑞穂, 大嶋一郎, 斉藤祐司, 須川成利, 大見忠弘
数値制御プラズマCVM (Chemical Vaporization Machining)によるSOIの薄膜化−デバイス用基板としての加工面の評価−
精密工学会誌論文集, 69, 721-725 (2003).

山内和人, 山村和也, 三村秀和, 佐野泰久, 久保田章亀, 関戸康裕, 上野一匡, Alexei Souvorov, 玉作賢治, 矢橋牧名, 石川哲也, 森 勇藏
高精度X線ミラーのための干渉計を利用した形状計測システムの開発
精密工学会誌論文集, 69, 856-860 (2003).

森 勇藏, 芳井熊安, 安武　潔, 垣内弘章, 大参宏昌, 和田勝男
大気圧プラズマCVD法によるエピタキシャルSiの低温かつ高速成長（第1報）−エピタキシャルSi成長条件の検討−
精密工学会誌論文集, 69, 861-865 (2003).

T. Ono, S. Tsukamoto, and K. Hirose
Magnetic orderings in Al nanowires suspended between electrodes
Appl. Phys. Lett., 82, 4570-4572 (2003).

山内和人,　山村和也,　三村秀和,　佐野泰久,　齋藤　彰,　久保田章亀,　金岡政彦,　Alexei Souvorov,　玉作賢治,　矢橋牧名,　石川哲也,　森　勇藏
硬X線用斜入射平面ミラーの形状誤差が反射X線強度・位相分布に及ぼす影響の波動光学的評価
精密工学会誌論文集, 69, 997-1001 (2003).

T. Ono and K. Hirose
First-principles study of Peierls instability in infinite single-row Al wires
Phys. Rev. B, Phys. Rev. B, 68, 045409 1-5 (2003).

K. Endo, T. Ono, K. Arima, Y. Uesugi, K. Hirose and Y. Mori
Atomic Structure of Si(001)-c(4×4) Formed by Heating Processes after Wet Cleaning and its First-Principles Study
Jpn. J. Appl. Phys., 42, 4646-4649 (2003).

Y. Fujimoto, H. Okada, K. Inagaki, H. Goto, K. Endo and K. Hirose
Theoretical Study on the Scanning Tunneling Microscopy Image of Cl-Adsorbed Si(001)
Jpn. J. Appl. Phys., 42, 5267-5268 (2003).

Y. Mori, K. Hirose, K. Yamauchi, H. Goto, K. Yamamura and Y. Sano
Ultra-Precision Machining based on Physics and Chemistry
Sensors and Materials, 15, 1-19 (2003).

後藤英和，広瀬喜久治，小畠厳貴，當間康，稲田敬，森 勇藏
超純水のみによる電気化学的加工法の研究―Al(001)表面の陰極反応素過程の第一原理分子動力学シミュレーション−
精密工学会誌論文集, 69, 1332-1336 (2003).

豊田洋通, 井出敞, 八木秀次, 垣内弘章, 森 勇藏
大気圧以上の高圧力下でのプラズマCVDによるダイヤモンドの高速形成
精密工学会誌論文集, 69,1444-1448 (2003).

Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, and K. Wada
High-rate growth of epitaxial silicon at low temperatures (530-690℃) by atmospheric pressure plasma chemical vapor deposition
Thin Solid Films, 444,.138-145 (2003).

Y. Mori, H. Kakiuchi, K. Yoshii, K. Yasutake, and H. Ohmi
Characterization of hydrogenated amorphous Si1-xCx films prepared at extremely high rates using very high frequency plasma at atmospheric pressure
J. Phys. D: Applied Physics, 36, 3057-3063 (2003).

K. Yamamura, K. Yamauchi, H. Mimura, Y. Sano, A. Saito, K. Endo, A. Souvorov, M. Yabashi, K. Tamasaku, T. Ishikawa, and Y. Mori
Fabrication of elliptical mirror at nanometer-level accuracy for hard x-ray focusing by numerically controlled plasma chemical vaporization machining
Rev. Sci. Instrum., 74, 4549-4553 (2003).

K. Yamauchi, K. Yamamura, H. Mimura, Y. Sano, A. Saito, K. Endo, A. Souvorov, M. Yabashi, K. Tamasaku,T. Ishikawa and Y. Mori
Two-dimensional Submicron Focusing of Hard X-rays by Two Elliptical Mirrors Fabricated by Plasma Chemical Vaporization Machining and Elastic Emission Machining
Jpn. J. Appl. Phys., 42, 7129-7134 (2003).

Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA, and Yasushi AZUMA
FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO2 Surfaces
ANALYTICAL SCIENCES, 19, 1557-1559 (2003).

M. Akai-Kasaya, K. Shimizu, Y.Watanabe, A. Saito, M. Aono and Y. Kuwahara
Electronic Structure of a Polydiacetylene Nanowire Fabricated on Highly Ordered Pyrolytic Graphite
Phys. Rev. Lett., 91, 255501 1-4 (2003).

森 勇藏, 芳井熊安, 安武潔, 垣内弘章, 大参宏昌，中濱康治，江畑裕介
回転電極型大気圧プラズマCVD法による多結晶Siの成膜特性,
精密工学会誌論文集, 70, 144-148 (2004).

森 勇藏, 垣内弘章, 大参宏昌, 芳井熊安, 安武潔, 中濱康治
大気圧プラズマCVD法によるSiNxの成膜特性
精密工学会誌論文集, 70, 292-296 (2004).

Tomoya Ono and Kikuji Hirose
First-principles study on field evaporation for silicon atom on Si(001) surface
J. Appl. Phys., 95, 1568-1571 (2004).

Megumi Otani, Tomoya Ono, and Kikuji Hirose
First-principles study of electron transport through C20 cages
Phys. Rev. B, 69, 121408 1-4 (2004).

森 勇藏, 山内和人, 三村秀和, 稲垣耕司, 久保田章亀, 遠藤勝義
EEM（Elastic Emission Machining）によるSi（001）表面の平坦化（第１報）-超清浄EEM加工システムの開発-
精密工学会誌論文集, 70, 391-396 (2004).

石川哲也, 森 勇藏, 遠藤勝義
EEM (Elastic Emission Machining)およびプラズマCVM (Chemical Vaporization Machining による高精度X線全反射ミラーの開発)
日本放射光学会誌, 17, 3-9 (2004).

山内和人, 三村秀和, 久保田章亀, 有馬健太, 稲垣耕司, 遠藤勝義, 森勇藏
EEM（Elastic Emission Machining)によるSi(001)表面の平坦化(第2報)−加工表面の原子像観察と構造評価−
精密工学会誌, 70, 547-551 (2004).

Kenta ARIMA, Hiroaki KAKIUCHI, Manabu IKEDA, Katsuyoshi ENDO, Mizuho MORITA and Yuzo MORI
Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
Jpn. J. Appl. Phys., 43, 1891-1895 (2004).

森　勇藏, 垣内弘章, 芳井熊安, 安武　潔, 大参宏昌, 江畑裕介, 中村恒夫, 竹内昭博, 北條義之, 古川和彦
大気圧プラズマCVDによる超高速形成アモルファスSiを発電層とした薄膜太陽電池の基礎特性
精密工学会誌, 70, 562-567 (2004).

T. Sasaki, Y. Egami, A. Tanide, T. Ono, H. Goto, and K. Hirose
First-principles calculation method for electronic structures of nanojunctions suspended between semi-infinite electrodes
Materials Transactions JIM, 45, 1433-1436 (2004).

Y. Egami, T. Sasaki, S. Tsukamoto, T. Ono, K. Inagaki, and K. Hirose
First-principles study on electron conduction property of monatomic sodium nanowire
Materials Transactions JIM, 45, 1419-1421 (2004).

Y. Mori, K. Yamamura, and Y. Sano
Thinning of Silicon-on-Insulator Wafer by Numerically Controlled Plasma Chemical Vaporization Machining
Rev. Sci. Inst., 75, 942-946 (2004).

佐々木 都至, 安 弘, 遠藤勝義, 森 勇蔵
ナノパーティクル測定機によるシリコンウエハ面のマイクロラフネス測定法
精密工学会誌, 70, 700-704 (2004).

森　勇藏, 後藤英和, 広瀬喜久治, 當間　康, 小畠厳貴, 森田健一
超純水のみによる電気化学的加工法のダマシン配線形成プロセスへの応用
精密工学会誌, 70, 666-670 (2004).

Tomoya Ono and Kikuji Hirose
Geometry and conductance of Al wires suspended between semi-infinite crystalline electrodes
Phys. Rev. B, 70, 033403 1-4 (2004).

H. Mimura, K. Yamauchi, K. Yamamura, A. Kubota, S. Matsuyama, Y. Sano, K. Ueno, K. Endo, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa and Y. Mori
Image quality improvement in hard X-ray projection microscope using total reflection mirror optics
Journal of Synchrotoron Radiation, 11, 343-346 (2004).

垣内弘章, 中濱康治, 大参宏昌, 安武　潔, 芳井熊安, 森　勇藏
大気圧プラズマCVD法により高速形成したSiNx薄膜の構造と成膜パラメータの相関
精密工学会誌, 70, 956-960 (2004).

垣内弘章, 大参宏昌, 中澤弘一, 安武　潔, 芳井熊安, 森　勇藏
大気圧プラズマCVD法によるアモルファスSiCの高速成膜に関する研究(第２報)−成膜パラメータの最適化による膜構造の改善−
精密工学会誌, 70, 1075-1079 (2004).

Takashi Sasaki, Yoshiyuki Egami, Tomoya Ono and Kikuji Hirose
First-principles calculation of transport properties of single-row aluminum nanowires suspended between semi-infinite crystalline electrodes
Nanotechnology, 15, 1882-1885 (2004).

Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita and Yuzo Mori
Scanning tunneling microscopy/spectroscopy observation of intrinsic hydrogenated amorphous silicon surface under light irradiation
Surf. Sci., 572, 449-458 (2004).

Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA, Kazuo NISHIMURA, Tatsuya OKAZAKI, Shinichi URABE and Mizuho MORITA
Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
Jpn. J. Appl. Phys., 43, 7857-7860 (2004).

大参宏昌, 垣内弘章, 安武潔, 中濱康治, 江畑裕介, 芳井熊安, 森　勇藏
大気圧プラズマCVDプロセスによる多結晶Siの高速成膜プロセスにおける成膜速度の決定因子
精密工学会誌, 70, 1418-1422 (2004).

Kenta Arima, Jun Katoh and Katsuyoshi Endo
Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning
Appl. Phys. Lett., 85, 6254-6256 (2004).

Kiyoshi YASUTAKE, Hiromasa OHMI, Hiroaki KAKIUCHI, Heiji WATANABE, Kumayasu YOSHII, Yuzo MORI
Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
Jpn. J. Appl. Phys., 43, L1552-L1554 (2004).

Shinichi Urabe, Kazuo Nishimura, Satoru Morita and Mizuho Morita
Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling
Jpn. J. Appl. Phys., 43, 8242-8247 (2004).

K. Takami, J. Mizuno, M. Akai-kasaya, A.Saito, M.Aono, Y.Kuwahara
Conductivity Measurement of Polydiacetylene Thin Films by Double-Tip Scanning Tunneling Microscopy
The Journal of Physical Chemistry B, 108, 16353 -16356 (2004).

Akira SAITO, Hideo MATSUMOTO, Shuji OHNISI, Megumi AKAI-KASAYA, Yuji KUWAHARA, and Masakazu AONO
Structure of Atomically Smoothed LiNbO3 (0001) Surface
Jpn. J. Appl. Phys., 43, 2057-2060 (2004).

T. Shimura, K.Fukuda1, K. Yasutake, and M. Umeno
Characterization of SOI Wafers by Synchrotron X-ray Topography
Eur. Phys. J. Appl. Phys., 27, 439-442 (2004).

T. Shimura, K. Yasutake, M. Umeno, and M. Nagase
X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process
Appl. Phys. Lett., 86, 071903 1-3 (2005).

S. Horie, T. Ono, K. Hirose, and K. Endo
First-Principles Study on the Scanning Tunneling Microscopy Image of H-Adsorbed Si(001) Surface,
J. Surf. Sci. Soc. Jpn., 26, 36-40 (2005).

T. Ono, T. Sasaki, J. Otsuka, and K. Hirose,
First-principles study on field evaporation of surface atoms from W(011) and Mo(011) surfaces,
Surf. Sci., 577, 42-46 (2005).

H. Kakiuchi, Y. Nakahama, H. Ohmi, K. Yasutake, K. Yoshii and Y. Mori
Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition
Thin Solid Films, 479, 17-23 (2005).

K. Takami, M. Akai-kasaya, A. Saito, M. Aono, Y. Kuwahara
Construction of Independently Driven Double-Tip Scanning Tunneling Microscope
Jpn. J. Appl. Phys., 44, L120-L122 (2005).

Takayoshi Shimura, Kiyoshi Yasutake, Masataka Umeno and Masao Nagase
X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process
Appl. Phys. Lett., 86, 071903, (2005).

K. Yasutake, H. Kakiuchi, H. Ohmi, K. Yoshii, and Y. Mori
Defect-free growth of epitaxial silicon at low temperatures (500 - 800°C) by atmospheric pressure plasma chemical vapor deposition
Appl. Phys., A81, 1139-1144, (2005).

Mari Shimura, Akira Saito, Satoshi Matsuyama, Takahiro Sakuma, Yasuhito Terui, Kazumasa Ueno, Hrokatsu Yumoto, Kazuto Yamauchi, Kazuya Yamamura, Hidekazu Mimura, Ysuhisa Sano, Makina Yabashi, Kenji Tamasaku, Kazuto Nishio, Yoshinori Nishino, Katsuyoshi Endo, Kiyohiko Hatake, Yuzo Mori, Yukihito Ishizaka, and Tetsuya Ichikawa
Element Array by Scanning X-ray Fluorescence Microscopy after Cis-Diamminedichloro-Platinum (II) Treatment
Cancer Research, 65(12), 4998-5002, (2005).

Yoshio Ichii, Yuzo Mori, Kikuji Hirose, Katsuyoshi Endo, Kazuto Yamauchi, Hidekazu Goto
Electrochemical Etching Using Surface Carboxylated Graphite Electrodes in Ultrapure Water
Electrochemica Acta, 50(27), 5379-5383, (2005).

H. Kakiuchi, M. Matsumoto, Y. Ebata, H. Ohmi, K. Yasutake, K. Yoshii and Y. Mori
Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition
J. Non-Crystalline Solids, 351, 741-747, (2005).

A. Kubota, H. Mimura, K. Inagaki, H. Yumoto, Y. Mori and K. Yamauchi
Morphological Stability of Si (001) Surface in Mixture Fluid of Ultrapure Water and Silica Powder Particles in Elastic Emission Machining
Jpn. J. Appl. Phys., 44(8), 5893-5897, (2005).

Akira SAITO, Kazuki YAMASAKI, Kazuhiro TAKAMI, Shuji OHNISI, Megumi AKAI-KASAYA, Masakazu AONO, Yuji KUWAHARA
Structural Study of Initial Growth of Nickel on Yttria-Stabilized Zirconiz by Coaxial Impact-Collision Ion Scattering Spectroscopy
Jpn. J. Appl. Phys., 44(4B), 2630-2633, (2005).

Yuzo Mori, Kazuya Yamamura, Katsuyoshi Endo, Kazuto Yamauchi, Kiyoshi Yasutake, Hidekazu Goto, Hiroaki Kakiuchi, Yasuhisa Sano and Hidekazu Mimura
Creation of Perfect Surfaces
Journal of Crystal Growth, 275, 39-50, (2005).

A. Kubota, H. Mimura, K. Inagaki, K. Arima, Y. Mori, K. Yamauchi
Preparation of Ultrasmooth and defect-free 4H-SiC(0001) Surfaces by Elastic Emission Machining
Journal of Electronic Material, 34(4), 439-443, (2005).

Takashi Sasaki, Yoshiyuki Egami, Atsushi Tanide, Tomoya Ono, Hidekazu Goto and Kikuji Hirose"
First-Principles Calculation for Electronic Structures of Nanojunctions Suspended between Semi-Infinite Electrodes
Journal of the Japanese Institute of Metals, 69(6), 457-459, (2005).

H. Mimura, S. Matsuyama, H. Yumoto, H. Hara, K. Yamamura, Y. Sano, M. Shibahara, K. Endo, Y. Mori, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa and K. Yamauchi
Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors
Jpn. J. Appl. Phys., 44(18), L539-L542, (2005).

Heiji Watanabe, Satoshi Kamiyama, Naoto Umezawa, Kenji Shiraishi, Shiniti Yoshida, Yasumasa Watanabe, Tsunetoshi Arikado, Toyohiro Chikow, Keisaku Yamada, and Kiyoshi Yasutake
Role of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
Jpn. J. Appl. Phys., 44, L1333-L1336, (2005).

Y. Egami, T. Sasaki, T. Ono, and K. Hirose
First-principles study on electron-conduction in sodium nanowire
Nanotechnology, 16(5), S161-S164, (2005).

Tomoya Ono and Kikuji Hirose
First-principles study of dielectric properties of bulk NaCl and ultrathin NaCl films under a finite external electric field
Phys. Rev. B, 72(08), 085105,(2005).

Tomoya Ono and Kikuji Hirose
Real-space electronic-structure calculations with a time-saving double-grid technique
Phys. Rev. B, 72(08), 085115, (2005).

Shinya Horie, Kenta Arima, Kikuji Hirose, Jun Katoh, Tomoya Ono and Katsuyoshi Endo
First-principles study on scanning tunneling microscopy images of different hydrogen-terminated Si(110) surfaces
Phys. Rev. B, 72(11), 113306, (2005).

Y. Egami, T. Ono, K. Hirose
Even-odd oscillation in conductance of a single-row sodium nanowire
Phys. Rev. B, 72(12), 125318, (2005).

Tomoya Ono and Kikuji Hirose
First-Principles Study on Electron-Conduction Properties of Helical Gold Nanowires
Phys. Rev. Lett., 94(20), 206806, (2005).

H. Mimura, H. Yumoto, S. Matsuyama, K. Yamamura, Y. Sano, K. Ueno, K. Endo, Y. Mori, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa and K. Yamauchi
Relative angle determinable stitching interferometry for hard X-ray reflective optics
Rev. Sci. Instrum. 76, 045102 (2005).

Masafumi Shibahara, Kazuya Yamamura, Yasuhisa Sano, Tsuyoshi Sugiyama, Katsuyoshi Endo, Yuzo Mori
Improvement of thickness distribution of quartz crystal wafer by numerically controlled plasma chemical vaporization machining
Rev. Sci. Instrum., 09610376 (2005).

H. Yumoto, H. Mimura, S. Matsuyama, K. Yamamura, Y. Sano, K. Ueno, K. Endo, Y. Mori, Y. Nishino, M. Yabashi, K. Tamasaku, T. Ishikawa, and K. Yamauchi
Fabrication of elliptically figured mirror for focusing hard X-rays to size less than 50 nm
Rev. Sci. Instrum., 76, 063708 (2005).

S. Matsuyama, H. Mimura, H. Yumoto, K. Yamamura, Y. Sano, K. Endo, Y. Mori, M. Yabashi, K. Tamasaku, Y. Nishino, T. Ishikawa and K. Yamauchi
Diffraction-limited two-dimensional hard-X-rays focusing in 100nm level using K-B mirror arrangement
Revew of Scientific Instrument. 76, 083114, (2005).

Yoshitaka Fujimoto, Kikuji Hirose, Takahisa Ohno
Calculations of surface electronic structures by the overbridging boundary-matching method
Surface Science, 586, 74-82, (2005).

K. Takami, Y. Kuwahara, T. Ishii, M. Akai-Kasaya, A.Saito, M.Aono
Significant increase in conductivity of polydiacetylene thin film induced by iodine doping
Surface Science, 591, L273-L279, (2005).

T.Shimura, K.Fukuda, K.Yasutake, T.Hosoi, and M.Umeno
Comparison of Ordered Structure in Buried Oxide Layers in High-dose, Low-dose, and Internal-thermal-oxidation Separation-by-implanted-oxygen Wafers
Thin Solid Films, 476, 125-129, (2005).

H. Kakiuchi, Y. Nakahama, H. Ohmi, K. Yasutake, K. Yoshii and Y. Mori
Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition
Thin Solid Films, 479, 17-23, (2005).

山村和也、柴原正文、佐野泰久、杉山　剛、遠藤勝義、森　勇藏
数値制御プラズマCVMによる水晶ウエハの高精度加工に関する研究−加工装置の開発と基本的加工特性の取得−
精密工学会誌, 71, 455-459, (2005).

久保田章亀、三村秀和、佐野泰久、山村和也、山内和人、森　勇藏
EEM(Elastic Emission Machining)による4H-SiC(0001)表面の平滑化
精密工学会誌, 71, 477-480, (2005).

柴原正文、山村和也、佐野泰久、杉山　剛、遠藤勝義、森　勇藏
数値制御プラズマCVMによる水晶ウエハの高精度加工に関する研究−円筒型回転電極を用いた数値制御加工による水晶ウエハ厚さの均一化−
精密工学会誌, 71, 655-659, (2005).

久保田章亀、三村秀和、稲垣耕司、森　勇藏、山内和人
EEM (Elastic Emission Machining)プロセスにおける微粒子表面の形態が加工表面に及ぼす影響
精密工学会誌, 71(6), 762-766, (2005).

湯本博勝、三村秀和、松山智至、山村和也、佐野泰久、上野一匡、遠藤勝義、森　勇藏、西野吉則、玉作賢治、矢橋牧名、石川哲也、山内和人
硬X線ナノ集光用超高精度楕円ミラーの作製と1次元集光性能の評価,
精密工学会誌, 71(9), 1137-1140, (2005).

久保田章亀、三村秀和、湯本博勝，森　勇藏、山内和人
EEM (Elastic Emission Machining)プロセスにおける加工液がSi(001)表面のラフネスに及ぼす影響
精密工学会誌, 71(5), 628-632, (2005).

Shinichi Urabe, Kazuo Nishimura, Shuhei Nishikawa, Satoru Morita and Mizuzho Morita
Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating
Jpn. J. Appl. Phys., 44, 8091-8095, (2005).

K. Yamauchi, K. Yamamura, H. Mimura, Y. Sano,A. Saito, A. Souvorov, K.Tamasaku, M. Yabashi, T. Ishikawa, Y. Mori,
Wave-optical evaluation of interference fringes and wavefront phase in hard X-ray beam totally reflected by mirror optics
Appl. Opt. 44, 6927-6932 (2005).

H. Komoda, M. Yoshida, Y. Yamamoto, K. Iwasaki, H. Watanabe, and K. Yasutake
Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System
Jpn. J. Appl. Phys., 44, L515-L517, (2005).

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe and K. Yasutake
Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy
Applied Physics Letters, 87, 252908-1-252908-3, (2005).

大参宏昌，垣内弘章，中濱康治，江畑祐介，安武潔，芳井熊安，森勇藏
大気圧プラズマCVDにより高速形成した多結晶Si薄膜の構造に対するSiH4濃度の影響
精密工学会誌, 71, 1393-1398, (2005).

Kenta Arima, Jun Katoh, Shinya Horie, Katsuyoshi Endo, Tomoya Ono, Shigetoshi Sugawa, Hiroshi Akahori, Akinobu Teramoto and Tadahiro Ohmi
Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly-resolved scanning tunneling microscopy
J. Appl. Phys., 95(10), 103525 1-8, (2005).

A. Saito, J. Maruyama, K. Manabe, K. Kitamoto, K. Takahashi, Y. Takagi, S. Hirotsune, Y. Tanaka, D. Miwa, M. Yabashi, M. Ishii, M. Akai-Kasaya, S. Shin, T. Ishikawa, Y. Kuwahara and M. Aono
Scanning Tunneling Microscope Combined with Hard X-ray Micro-Beam of High Brilliance from Synchrotron Radiation Source
Japanese Journal of Applied Physics, 45(3B), 1913-1916, (2006).

M. Akai-Kasaya, Y. Yamamoto, A.Saito, M. Aono, and Y. Kuwahara
Polaron Injection into a One-dimensional Polydiacetylene Nanowire
Japanese Journal of Applied Physics, 45(3B), 2049-2052, (2006).

T. Uemura, S. Yamaguchi, M. Akai-Kasaya, A. Saito, M. Aono, and Y. Kuwahara
Tunneling-current-induced light emission from individual carbon nanotubes
Surface Sience, 600, L15-L19, (2006).

M. Akai-Kasaya, K. Nishihara, A. Saito, M. Aono, Y. Kuwahara
Quantum Point Contact Switches Using Silver Particles
Applied Physics Letters, 88 (2006) 023107, 88, 23107-1-023107-3, (2006).

K. Takami, M. Akai-Kasaya, A. Saito, M. Aono, Y. Kuwahara
Control of Conduction of Iodine-Doped Poly(3-octylthiophene) Thin Films by Double-Tip Scanning Tunneling Microscopy
Chemical Physics Letters, 419, 250-253, (2006).

A.Saito, J.Maruyama, K.Manabe, K.Kitamoto, K.Takahashi, K.Takami, Y.Tanaka, D.Miwa, M.Tabashi, M.Ishii, Y.Takagi, M.Akai-Kasaya, S.Shin, T.Ishikawa, Y.Kuwahara, M.Aono
Development of Scanning Tunneling Microscope for In-Situ Experiments with Synchrotron Radiation Hard-X-Ray Microbeam
J.Shyncrotron Radiation, 13, 216-220, (2006).

H. Kakiuchi, H. Ohmi, M. Aketa, K. Yasutake, K. Yoshii and Y. Mori
Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition
Thin Solid Films, 496, 259-265, (2006).

森田健一，後藤英和，山内和人，遠藤勝義，森勇藏
超純水・高速せん断流による洗浄法の開発（第１報）―Si基板表面のCu汚染の洗浄効果―
精密工学会誌, 72(1), 89-94, (2006).

Shinya Horie, Tomoya Ono, Yuji Kuwahara, Katsuyoshi Endo, and Kikuji Hirose
First-principles calculation of tunneling current of H2- or NH3-adsorbed Si(001) surface in scanning tunneling microscopy
Jpn. J. Appl. Phys., 45(3B), 2154-2157, (2006).

Yoshiyuki Egami, Takashi Sasaki, Tomoya Ono, Hidekazu Goto, and Kikuji Hirose
First-principles study on electron conduction properties of single-row gold nanowires
Jpn. J. Appl. Phys., 45(3B), 2132-2135, (2006).

森田健一，後藤英和，山内和人，遠藤勝義，森勇藏
超純水・高速せん断流によるSi基板洗浄法の研究 −Si基板表面のDOP汚染の洗浄効果−
精密工学会誌, 72(3), 387-392, (2006).

H. Kakiuchi, H. Ohmi, Y. Kuwahara, M. Matsumoto, Y. Ebata, K. Yasutake, K. Yoshii and Y. Mori
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure
Jpn. J. Appl. Phys., 45, 3587-3591, (2006).

H. Ohmi, H. Kakiuchi, K. Yasutake, Y. Nakahama, Y. Ebata, K. Yoshii and Y. Mori
Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
Jpn. J. Appl. Phys., 45, 3581-3586, (2006).

K. Yasutake, H. Ohmi, H. Kakiuchi, T. Wakamiya, N. Tawara and H. Watanabe
Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode
Jpn. J. Appl. Phys., 45, 3592-3597, (2006).

H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa and K. Yasutake
Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma CVD Using Monomethylsilane
Jpn. J. Appl. Phys., 45, 8381-8387, (2006).

H. Ohmi, H. Kakiuchi, H. Tawara, T. Wakamiya, T. Shimura, H. Watanabe and K. Yasutake
Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
Jpn. J. Appl. Phys., 45, 8424-8429, (2006).

H. Ohmi, H. Kakiuchi, H. Watanabe and K. Yasutake
Low-Temperature Crystallization of Amorphous Silicon by Atmospheric Pressure Plasma Treatment in H2/He or H2/Ar Mixture
Jpn. J. Appl. Phys., 45, 8488-8493, (2006).

M. Shimizu, H. Ohmi, H. Kakiuchi and K. Yasutake
Lifetime measurement of metastable fluorine atoms using electron cyclotron resonance plasma source
J. Vac. Sci. Technol. A, 24, 2133-2138, (2006).

K. Yasutake, H. Watanabe, H. Ohmi and H. Kakiuchi
Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates
ECS Transactions “Thin Film Transistor Technology 8”, 3, 215-225, (2006).

S. Nishikawa, H. Hashimoto, M. Chikamoto, K. Horikoshi, M. Aoki, K. Arima, J. Uchikoshi and M. Morita
Photo current through SnO2/SiC/p-Si(100) structures
Thin Solid Films, 508, 385-388, (2006).

K. Arima, K. Hiwa, R. Nakaoka and M. Morita
Surface Hall Potentiometry for Characterizing Semiconductor Films
Jpn. J. Appl. Phys., 45, 3601-3605, (2006).

K. Arima, T. Shigetoshi, H. Kakiuchi and M. Morita
Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale
Physica B, 376-377, 893-896, (2006).

K. Arima, A. Kubota, H. Mimura, K. Inagaki, K. Endo, Y. Mori and K. Yamauchi
Highly resolved scanning tunneling microscopy study of Si(001) surfaces flattened in aqueous environment
Surf. Sci., 600, L185- L188, (2006).

井上晴行，片岡俊彦，長尾祥浩，押鐘　寧，中野元博，越智保文，有馬健太，森田瑞穂
レーザ光散乱法によるSiウエハ表面上の極薄酸化膜段差の計測
精密工学会誌, 72, 1363-1367, (2006).

T. Uemura, M. Furumoto, T. Nakano, M. Akai-Kasaya, M. Aono, A. Saito and Y. Kuwahara
Tunneling-Current-Induced Light Emission from Copper Phthalocyanine Thin Films
e-Journal of Surface Science and Nanotechnology, Vol.4, 559-562, (2006).

M. Nakaya, T. Nakayama, Y. Kuwahara, M. Aono
Fabrication of Nanostructures by Selective Growth of C60 and Si on Si(001) Substrate
Surface Science, 600, 2810-2816, (2006).

Yasuhisa Sano, Masayo Watanabe, Kazuya Yamamura, Kazuto Yamauchi, Takeshi Ishida, Kenta Arima, Akihisa Kubota and Yuzo Mori
Polishing characteristics of silicon carbide by plasma chemical vaporization machining
Japanese Journal of Applied Physics, 45, 8277-8280, (2006).

Y. Ichii, Y. Mori, K. Hirose, K. Endo, K. Yamauchi, and H. Goto
Electrochemical Etching Using Surface-Sulfonated Electrodes in Ultrapure Water
J. Electrochem. Soc., 153(5), C344-C348, (2006).

Y. Ichii, and H. Goto
Development of Eco-Friendly Electrochemical Etching Process of Silicon on Cathode
J. Electrochem. Soc., 153(10), C694-C700, (2006).

Satoshi Matsuyama, Hidekazu Mimura, Hirokatsu Yumoto, Yasuhisa Sano, Kazuya Yamamura, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, Kazuto Yamauchi
Development of scanning X-ray fluorescence microscope with spatial resolution of 30nm using K-B mirrors optics
Review of Scientific Instruments, 77, 93107-93111, (2006).

Hirokatsu Yumoto, Hidekazu Mimura, Satoshi Matsuyama, Soichiro Handa, Yasuhisa Sano, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, and Kazuto Yamauchi
At-wavelength figure metrology of hard x-ray focusing mirrors
Review of Scientific Instruments, 77, 63712-63717, (2006).

H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K.Yagi, J. Murata and K. Yamauchi
Novel abrasive-free planarization of 4H-SiC (0001) using catalyst
Journal of Electronic Materials, 35, L11- L14, (2006).

Daisuke Nakagawa, Katsuhiro Kutsuki, Tomoya Ono, and Kikuji Hirose
First-principles study of leakage current through thin SiO2 films
Physica B, 376-377, 389-391, (2006).

Jun Otsuka, Tomoya ono, Kouji Inagaki, and Kikuji Hirose
First-principles calculations of dielectric constants of C20 bulk using Wannier functions
Physica B, 376-377, 320-323, (2006).

K. Inagaki, T. Miyata, K. Endo, K. Hirose and Y. Mori
Differential reflectance spectrum measurement to evaluate defects introduced by wet cleaning process
Physica B, 376-377, 922-925, (2006).

Tomoya Ono, Shinya Horie, Katsuyoshi Endo, and Kikuji Hirose
First-principles study of the tunnel current between a scanning tunneling microscopy tip and a hydrogen-adsorbed Si(001) surface
Phys. Rev. B, 73(24), 245314-1 - 245314-6, (2006).

Takashi Sasaki, Tomoya Ono, and Kikuji Hirose
Order-N first-principles calculation method for self-consistent ground-state electronic structures of semi-infinite systems
Phys. Rev. E, 74(5), 056704-1 - 056704-7, (2006).

Yoshio Ichii, Yuzo Mori, Kikuji Hirose, Katsuyoshi Endo, Kazuto Yamauchi and Hidekazu Goto
Electrochemical Etching Using Surface-Sulfonated Electrodes in Ultrapure Water
Journal of The Electrochemical Society, 153(5), C344- C348, (2006).

Yoshio Ichii and Hidekazu Goto
Development of Eco-Friendly Electrochemical Etching Process of Silicon on Cathode
Journal of The Electrochemical Society, 153(10), C694-C700, (2006).

森田健一、後藤英和、遠藤勝義、山内和人、堤　建一、森　勇藏
超純水・高速せん断流による洗浄法の開発　−超純水・高速せん断流によるCu除去メカニズムの研究
精密工学会誌, 72(4), 529-533, (2006).

Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura and Keisaku Yamada
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes　and Its Impact on Electrical Properties
Jpn. J. Appl. Phys., 45, 2933-2938, (2006).

Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, and Masataka Umeno
Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers
Appl. Phys. Lett., 89, 111923-1 - 111923-3, (2006).

Kazunori Fukuda, Takayoshi Yoshida, Takayoshi Shimura, Kiyoshi Yasutake, Masataka Umeno, and Satoshi Iida
White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
Jpn. J. Appl. Phys., 45, 6795-6799, (2006).

篠原　亘，小平正和，遠藤勝義
モノシランとオゾンの反応を用いた常圧光CVD法による酸化シリコン薄膜の形成
精密工学会誌, 72, 523-528, (2006).

森田健一，後藤英和，遠藤勝義，山内和人，堤　健一，森　勇藏
超純水・高速せん断流による洗浄法の開発（第2報）−超純水・高速せん断流によるCu除去メカニズムの研究−
精密工学会誌, 72, 529-533, (2006).

Jun Katoh, Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Yuzo Mori, Kazuto Yamauchi, and Katsuyoshi Endo
Atomic-Scale Evaluation of Si(111) Surfaces Finished by the Planarization Process Utilizing SiO2 Particles Mixed with Water
J. Electrochem. Soc, 153, G560- G565, (2006).

松山智至，三村秀和，湯本博勝，原英之，山村和也，佐野泰久，西野吉則，玉作賢治，矢橋牧名，石川哲也，山内和人
高分解能X線顕微鏡のためのミラーマニピュレータの開発 −高X線領域における50nm以下の回折限界集光の実現−
精密工学会誌, 72, 884-888, (2006).

柴原正文，山村和也，佐野泰久，杉山　剛，山本雄介，遠藤勝義，森　勇藏
数値制御プラズマCVMによる水晶ウエハの高精度加工に関する研究　−回転電極とパイプ電極を併用した数値制御加工による水晶ウエハ厚さの均一化−
精密工学会誌, 72, 934-938, (2006).

Hideo Takino, Norio Shibata, Hiroshi Itoh, Teruki Kobayashi, Koshichi Nemoto, Takashi Fujii, Naohiko Goto, Kazuya Yamamura, Yasuhisa Sano and Yuzo Mori
Fabrication of small complex-shaped optics by plasma chemical vaporization machining with a microelectrode
Appl. Opt., 45, 5897-5902, (2006).

安　弘，佐々木都至，遠藤勝義，森　勇藏
光散乱法を用いたナノパーティクル測定機の開発−標準ナノ粒子を用いた検出精度と洗浄効果の評価−
精密工学会誌, 72, 1296-1300, (2006).

Satoshi Matsuyama, Hidekazu Mimura, Hirokatsu Yumoto, Hideyuki Hara, Kazuya Yamamura, Yasuhisa Sano, Katsuyoshi Endo, Yuzo Mori, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, Kazuto Yamauchi
Development of mirror manipulator for hard X-ray nanofocusing at sub-50 nm level
Rev. Sci. Instrum., 77, 103102-, (2006).

Shinya Horie, Tomoya Ono, Yuji Kuwahara, Katsuyoshi Endo and Kikuji Hirose
First-Principles Calculation of Tunneling Current of H2- or NH3 -Adsorbed Si(001) Surface in Scanning Tunneling Microscopy
Jpn. J. Appl. Phys., 45, 2154-2157, (2006).

Kazuya Yamamura,Yasuhisa Sano,Masafumi Shibahara,Kazuto Yamauchi,Hidekazu Mimura,Katsuyoshi Endo,Yuzo Mori
Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
Jpn. J. Appl. Phys., 45, 8270-8276, (2006).

山村和也, 柴原正文
数値制御プラズマCVMによる水晶ウエハの高精度加工
超音波テクノ, 18, 52-55, (2006).

H. Kakiuchi, H. Ohmi and K. Yasutake
High-Rate and Low-Temperature Film Growth Technology Using Stable Glow Plasma at Atmospheric Pressure
Trends in Thin Solid Films Research, , 1-50, (2007.MAR).

Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, and Kiyoshi Yasutake
Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
Appl. Phys. Lett., 90, 091909-1-091909-3, (2007.FEB).

A. Saito, Y.Miyamura, M.Nakajima, Y.Ishikawa, K.Sogo, Y. Kuwahara and Y.Hirai
Reproduction of the Morpho Blue by Nanocasting Lithography
J. Vac. Sci. Technol. B, 24, 3248-3251, (2006).

Yasuhisa Sano, Masayo Watanabe, Kazuya Yamamura, Kazuto Yamauchi, Takeshi Ishida, Kenta Arima, Akihisa Kubota, Yuzo Mori
Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining
Materials Science Forum, 556-557, pp.757-760, (2007).

H. Mimura, H. Yumoto, S. Matsuyama, Y. Sano, K. Yamamura, Y. Mori, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa, K. Yamauchi
Efficient focusing of hard x rays to 25 nm by a total reflection mirror
Appl. Phys. Lett., 90, 51903-1-51903-3, (2007).

S. Matsuyama, H. Mimura, H. Yumoto, H. Hara, K. Yamamura, Y. Sano, K. Endo, Y. Mori, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa, K. Yamauchi
Development of mirror manipulator for hard X-ray nanofocusing at sub-50 nm level
Review of Scientific Instruments , 77, 093107-1-093107-5, (2006).

Hideyuki Hara, Yasuhisa Sano, Hidekazu Mimura, Kenta Arima, Akihisa Kubota, Keita Yagi, Junji Murata and Kazuto Yamauchi
Damage-free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
Materials Science Forum, 556-557, 749-751, (2007).

Tomoya Ono and Kikuji Hirose
First-Principles Study on Electron-Conduction Properties of C60 Bridges
Phys. Rev. Lett., 98（2）, 026804-1-026804-4, (2007).

Yoshio Ichii and Hidekazu Goto
Fabrication of flat silicon surfaces using ion-exchange particles in ultrapure water
Electrochimica Acta, 52（8）, 2927-2932, (2007).

K. Manabe, T. Hase, T. Tatsumi, H. Watanabe, and K. Yasutake
Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
Jpn. J. Appl. Phys., 45, 9053-9057, (2006).

K. Manabe, T. Hase, T. Tatsumi, H. Watanabe, and K. Yasutake
Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
Jpn. J. Appl. Phys., 46, 91-97, (2007).

Kazuya Yamamura, Masafumi Shibahara, Yasuhisa Sano, Yusuke Yamamoto, Tetsuya Morikawa, Yuzo Mori
Improvement of the Thickness Distribution of AT cut Quartz Crystal Wafer by Open-air Type Plasma Chemical Vaporization Machining
Surf. Sci. Nanotech, 5, 41-44, (2007).

柴原正文, 稲垣官司, 山村和也
大気圧プラズマ処理によるポリエチレンテレフタレートの表面改質
表面技術誌, 58, 124-129, (2007).