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K. Arima, K. Yamauchi, H. Mimura, A. Kubota, K. Inagaki, Y. Mori and K. Endo
Atomic-Scale Evaluation of Si(001) Surfaces Finished by Novel Global Planarization Process
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), 335.
K. Arima, J. Katoh and K. Endo
Atomic Images of H-Terminated Si(110)-(1x1) Surfaces by Wet Cleaning
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), 360.
S. Horie, K. Arima, K. Hirose, J. Katoh, T. Ono, K. Endo
First-Principles Study on Scanning Tunneling Microscopy Images of Hydrogen-Terminated Si(110) Surfaces
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), 421.
J. Katoh, A. Kubota, H. Mimura, K. Yamauchi, K. Arima, K. Inagaki, Y. Mori and K. Endo
Investigation of machining mechanism in Elastic Emission Machining (EEM) on the atomic scale
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), 89.
T. Ono, S. Horie, K. Endo, K. Hirose
Current Image of H-Adsorbed Si(001) by First-Principles Electron-Transport Calculation
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), 52.
T. Sasaki, Y. Egami, T. Ono and K. Hirose
First-Principles Calculation Method for Self-Consistent Ground-State Electronic Structures of Nanostructures Attached to Semi-Infinite Crystalline
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), Mon-8-C2.
T. Ono and K. Hirose
First-principles study on electron conduction property of nanowires
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), Mon-8-C5.
Y. Egami,, T. Sasaki, T. Ono, and K. Hirose
First-principles study on the conductance oscillation of the single-row nanowire
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), Mon-Pos-83.
A.Saito, J.Maruyama, K.Manabe, K.Kitamoto, K.Tkahashi, K.Takami, S.Hirotsune, Y.Tanaka, M.Yabashi, M.Ishii, M.Akai-Kasaya, S.Shin, T.Ishikawa, Y.Kuwahara, M.Aono
Scanning Tunneling Microscope Combined with Hard X-ray Micro-Beam of High Brilliance from Synchrotron Radiation Source
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), Mon-Pos-84.
M. Akai-Kasaya, Y. Yamamoto, A.Saito, M. Aono, Y. Kuwahara
Polaron Injection into a One-dimensional Polydiacetylene Nanowire
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05) (July 3-8, 2005 Sapporo Convention Center, Japan), Wed-8-C4.
H. Watanabe, S. Yoshida,Y. Watanabe, T. Shimura,K. Yasutake, Y. Akasaka,Y. Nara, K. Nakamura and K. Yamada
Thermal Degradationof HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.244-245 (September 13-15, 2005 Kobe, Japan).
H. Ohmi, H. Kakiuchi, K. Yasutake, Y. Nakahama, Y. Ebata, Y. Kumayasu and Y. Mori
Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.372-373 (September 13-15, 2005 Kobe, Japan).
Kenta Arima, Kenji Hiwa, Ryoji Nakaoka and Mizuho Morita
Surface Hall Potentiometry to Characterize Functional Semiconductor Films
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.378-3791 (September 13-15, 2005 Kobe, Japan).
Motonori Chikamoto, Hideaki Hashimoto, Kosuke Horikoshi, Akihito Shinozaki, Satoru Morita, Kenta Arima, Junichi Uchikoshi, and Mizuho Morita
Photodetector Characteristics of Meta-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide Gate
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.734-7351 (September 13-15, 2005 Kobe, Japan).
T. Wakamiya, H. Ohmi,H. Kakiuchi, H. Watanabe,K. Yasutake, K. Yoshii and Y. Mori
High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.756-757 (September 13-15, 2005 Kobe, Japan).
H. Kakiuchi, H. Ohmi,Y. Kuwahara, M. Matsumoto,Y. Ebata, K. Yasutake,K. Yoshii and Y. Mori
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.758-759 (September 13-15, 2005 Kobe, Japan).
Y. Hamaoka, H. Ohmi,H. Kakiuchi and K. Yasutake
Study of Effects of Metal Layer on Hydrogen Desorption from Hydrogenated Amorphous Silicon Using Temperature-Programmed Desorption
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.760-761 (September 13-15, 2005 Kobe, Japan).
Satoru Morita, Takaaki Hirokane, Tatsuya Takegawa, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
Development of Nano-Gap Device for Biosensor
2005 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.828-8291 (September 13-15, 2005 Kobe, Japan).
Y. Sano, K. Yamamura, K. Endo, Y. Mori
Plasma Chemical Vaporization Machining (PCVM)
Book of Lecture Note, IWCGT-3, 305-316 (September 10-18, 2005 Beatenberg, Switzerland) .
K. Yamauchi, H. Mimura, K. Endo, Y. Mori
Elastic Emission Machining (EEM)
Book of Lecture Note, IWCGT-3, 317-326 (September 10-18, 2005 Beatenberg, Switzerland) .
M. Shibahara, K. Yamamura, Y. Sano, T. Sugiyama, K. Endo and Y. Mori
Improvement of thickness uniformity of quartz crystal wafer by numerically controlled plasma CVM
Proc. SPIE 5869, 58690I (July 31- August 4, 2005 San Diego, USA).
S. Matsuyama, H. Mimura, H, Yumoto, K. Yamamura, Y. Sano, K. Endo, Y. Mori, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa, K. Yamauchi
Hard x-ray nanofocusing at 40-nm level using K-B mirror optics for nanoscopy/spectroscopy
Proc. SPIE 5918, 591804 (July 31- August 4, 2005 San Diego, USA).
Y. Higashi, Y. Takaie, K. Endo, T. Kume, K. Enami, K. Yamauchi, K. Yamamura, Y. Sano, K. Ueno, Y. Mori
A new designed ultra-high precision profiler
Proc. SPIE 5921, 592107 San Diego (July 31- August 4, 2005 San Diego, USA).
H. Mimura, H, Yumoto, S. Matsuyama, K. Yamamura, Y. Sano, K. Endo, Y. Mori, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa, K. Yamauchi
Surface figuring and measurement methods with spatial resolution close to 0.1 mm for x-ray mirror fabrication
Proc. SPIE 5921, 59210M (July 31- August 4, 2005 San Diego, USA).
Shuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Minoru Aoki, Kenta Arima, and Mizuho Morita
Electrical Properties of SiC/p-Si(100) Structure
Program and Abstracts of Fourth International Conference on Silicon Epitaxy and Heterostructures, 148-149, (2005).
Satoshi Matsuyama, Hidekazu Mimura, Hirokatsu Yumoto, Hideyuki Hara, Kazuya Yamamura, Yasuhisa Sano, Katsuyoshi Endo, Yuzo Mori, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, Kazuto Yamauchi
Scanning hard-X-ray microscope with spatial resolution better than 50nm using K-B mirror optics
Program and Abstracts, 8th International Conference on X-ray Microscopy, 109 (July 26-30, 2005 Himeji, Japan) .
Hidekazu Mimura, Satoshi Matsuyama, Hirokatsu Yumoto, Hideyuki Hara, Kazuya Yamamura, Yasuhisa Sano, Katsuyoshi Endo, Yuzo Mori, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, Kazuto Yamauchi
Hard X-ray diffraction-limited nanofocusing with unprecedentedly accurate mirrors
Program and Abstracts, 8th International Conference on X-ray Microscopy, 26 (July 26-30, 2005 Himeji, Japan) .
Yasuo Higashi, Yuichi Takaie, Katsuyoshi Endo, Tatsuya Kume, Kazuhiro Enami, Kazuto Yamauchi, Kazuya Yamamura, Yasuhisa Sano, Kenji Ueno, Yuzo Mori
A New Designed Ultra-high Precision Profiler - Study on slope error measurement of a mandrel for Wolter type-I mirror fabrication -
Program and Abstracts, 8th International Conference on X-ray Microscopy, 264 (July 26-30, 2005 Himeji, Japan).
T. Ono and K. Hirose
Electron transport through nanowires
Psi-k 2005 Conference (September 17 - September 21, 2005, Schwabisch Gmund, Germany), G5.
Y. Egami, T. Sasaki, T. Ono and K. Hirose
Study on the even-odd oscillation of the conductance for single-row nanowires
Psi-k 2005 Conference (September 17 - September 21, 2005, Schwabisch Gmund, Germany), G7.
T. Sasaki, Y. Egami, T. Ono and K. Hirose
First-principles calculation method for self-consistent ground-state electronic structures of semi-infinite crystalline hetero interfaces
Psi-k 2005 Conference (September 17 - September 21, 2005, Schwabisch Gmund, Germany), L17.
K. Arima, T. Shigetoshi, H. Kakiuchi and M. Morita
Surface photovoltage measurements of amorphous Si films on Si wafers by STM/STS
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), 379.
T. Sasaki, Y. Egami, T. Ono and K. Hirose
First-principles calculation method for self-consistent ground-state electronic structures of semi-infinite crystalline hetero junction
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), FrM2.3C.
K. Inagaki, T. Miyata, K. Endo, K. Hirose and Y. Mori
Differential reflectance spectrum measurement to evaluate defects introduced by wet cleaning process
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), ThP.131.
T. Ono, D. Nakagawa and K. Hirose
First-principles calculation for leakage current through thin SiO2 films
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), ThP.2.
T. Ono
First-principles calculation for electron conduction through nanowires
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), ThP.68.
Y. Egami, T. Sasaki, T. Ono and K. Hirose
Study on the conductance oscillation of the single-row nanowire by first-principles calculation
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), ThP.83.
J. Otsuka , T. Ono and K. Hirose
First-principles calculation of dielectric properties of C20 bulk
The 23rd International Conference on Defects in Semiconductors (July 24 - July29, 2005, Awaji Island, Hyogo, Japan), TuP.137.
H. Mimura, H. Yumoto, S. Matsuyama, H. Hara, K. Yamamura, Y. Sano, K. Ueno, K. Endo, Y. Mori, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa, K. Yamauchi
Stitching Interferometry for Surface Figure Measurement of X-ray Reflective Optics
The 89th OSA Annual Meeting, 2005 Frontiers in Optics/Laser Science conferences (October 16-20, 2005, Tuscon, Arizona, USA)
H. Yumoto, H. Mimura, S. Matsuyama, H. Hara, K. Yamamura, Y. Sano, K. Ueno, K. Endo, Y. Mori, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa, K. Yamauchi
Focusing Hard X-rays to Sub-50 nm Size by Elliptically Figured Mirror
The 89th OSA Annual Meeting, 2005 Frontiers in Optics/Laser Science conferences (October 16-20, 2005, Tuscon, Arizona, USA)
K. Yamauchi, H. Mimura, T. Matsuyama, H. Yumoto, K. Yamamura, Y. Sano, K. Endo, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa, and Y. Mori
Development of Elliptical Kirkpatrick-Baez Mirrors for Hard X-ray Nanofocusing
The 89th OSA Annual Meeting, 2005 Frontiers in Optics/Laser Science conferences (October 16-20, 2005, Tuscon, Arizona,USA)
Tomoya Ono and Kikuji Hirose
Electron Transport Properties of Nanoscale Wires
The 8th Asian Workshop on First-principles Electronic Structure Calculations (October 31 - November 2, 2005, Shanhai, China), 18.
Y. Egami, T. Sasaki, T. Ono and K. Hirose
Study on conduction oscillation of the nanowire array
The 8th Asian Workshop on First-principles Electronic Structure Calculations (October 31 - November 2, 2005, Shanhai, China), 46.
T. Sasaki, Y. Egami, T. Ono and K. Hirose
First-principles calculation method for electronic structures of hetero junctions suspended between crystalline electrodes
The 8th Asian Workshop on First-principles Electronic Structure Calculations (October 31 - November 2, 2005, Shanhai, China), 73.
T. Kimura S. Kakeya, K. Yagi, Y. Ichii, K. Inagaki, K. Endo, K. Hirose, and H. Goto
First-principles molecular-dynamics simulation of organic molecules dissociation process by OH
The 8th Asian Workshop on First-principles Electronic Structure Calculations (October 31 - November 2, 2005, Shanhai, China), 76.
Naoto Yoshii, Takaaki Hirokane, Shinichi Urabe, Kazuo Nishimura, Satoru Morita, and Mizuho Morita
CHARACTERIZATION OF TUNNELING CURRENT THROUGH ULTRATHIN SILICON DIOXIDE FILMS BY DIFFERENT-METAL GATES METHOD
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5 (September,2005 Pennington, NJ,USA), 277-282, (2005).
T. Shimura, E. Mishima, H. Watanabe, K. Yasutake, M. Umeno,K. Tatsumura, T. Watanabe, I. Ohdomari, K. Yamada,S. Kamiyama, Y. Akasaka, Y. Nara, and K. Nakamura
Ordered Structure in the Thermal Oxide Layer on Silicon Substrates (invited)
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5 (September,2005 Pennington, NJ,USA), 39, (2005).
Shinichi Urabe, Kazuo Nishimura, Syuhei Nishikawa, Satoru Morita and Mizuho Morita
QUANTITATIVE ANALYSIS OF REACTION OF HYDROGEN-TERMINATED Si(001) WITH OXYGEN DURING HEATING
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5 (September,2005 Pennington, NJ,USA), 61-67, (2005).
Motonori Chikamoto, Hideaki Hashimoto, Kosuke Horikoshi, Akihito Shinozaki, Satoru Morita, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
PHOTODETECTION CHARACTERISTICS OF SnO2-ULTRATHIN SiO2-Si STRUCTURES
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5 (September,2005 Pennington, NJ,USA), 97-102, (2005).
K. Hirose
FIRST-PRINCIPLES CALCULATION OF TRANSPORT PROPERTIES OF NANOSTRUCTURES
TNT 2005 "Trends in Nanotechnology" (August 29 - September 02, 2005, Oviedo, Spain).
T. Ono and K. Hirose
First-principles study on electron transport properties of nanoscale structures
TNT 2005 "Trends in Nanotechnology" (August 29 - September 02, 2005, Oviedo, Spain).
Y.Kuwahara, K.Takami, M.Akai-Kasaya, A.Saito, M.Aono
Evaluation of Electrical Conduction of Polydiacetylene Thin Films byDouble-tip STM
TNT 2005 "Trends in Nanotechnology" (August 29 - September 02, 2005, Oviedo, Spain).
Yasushi Oshikane, Akihiko Nagao, Kazuya Yamamura, Katsuyoshi Endo, Akinori Oda, Colin M. Western, Motoshi Goto, Takashi Fujimoto
Two-dimensional Actinometric Study of Fluorine and Oxygen Atom Densities in the CVM Plasma Gap and the Temperature Estimation with Electronic Spectra of Diatomic Molecules
Proceedings of the 17th International Symposium on Plasma Chemistry (ISPC-17, Toronto, Canada), No.245 (2005).
A. Saito, J. Maruyama, K. Manabe, K. Kitamoto, K. Takahashi, Y. Tanaka, M. Yabashi, M. Ishii, M. Akai-Kasaya, S. Shin, T. Ishikawa, Y. Kuwahara, M. Aono
Scanning Tunneling Microscope Assisted with Inner-Shell Excitation by Hard X-ray Micro-Beam
AVS 52nd International Symposium & Exhibition, Boston, MA USA, p.3, (2005).
SAITO A., KUWAHARA Y., SHIN S., ISHIKAWA T., AONO M. et al.
Coupling of Scanning Tunneling Microscope with Hard X-ray Micro-Beam from 27m Long Undulator at SPring-8
Workshop on the Coupling of Synchrotron Radiation IR and X-rays with Tip based Scanning Probe Microscopies, Grenoble, France, , (2005).
Higuchi Yuichi, Ohgami Naoki, Yura Kayo, Akai-Kasaya Megumi, Saito Akira, Aono Masakazu and Kuwahara Yuji
Fabrication of nanogap flat electrodes to measure electrical transport properties of molecules
International Symposium on Molecular Scale Electronics in Conjunction with 6th Molecular Scale Electronics Workshop in Japan, Tsukuba, Japan, , (2005).
Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe and K. Yasutake
Mapping of the local dielectric properties of Hf-based high-k films by scanning capacitance microscopy
Abstracts of International Symposium on Surface Science and Nanotechnology, Saitama, Japan, 133, (2005).
H. Watanabe, S. Yoshida, Y. Watanabe, E. Mishima, K. Kawamura, Y. Kita, T. Shimura, K. Yasutake, Y. Akasaka, Y. Nara, K. Shiraishi and K. Yamada
Effects of Intrinsic and Extrinsic Reactions at Metal/High-k Interfaces on Electrical Properties of Gate Stacks
Abstracts of 36th IEEE Semiconductor Interface Specialists Conference, Arlington, VA., 3-2, (2005).
Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake, Yasuji Nakahama, Yusuke Ebata, Kumayasu Yoshii and Yuzo Mori
Influence of H2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma CVD
2005 International Conference on Solid State Devices and Materials, Kobe, Japan, 372-373, (2005).
Hiroaki Kakiuchi, Hiromasa Ohmi, Yasuhito Kuwahara, Mitsuhiro Matsumoto, Yusuke Ebata, Kiyoshi Yasutake, Kumayasu Yoshii and Yuzo Mori
High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
2005 International Conference on Solid State Devices and Materials, Kobe, Japan, 758-759, (2005).
Yoshinori Hamaoka, Hiromasa Ohmi, Hiroaki Kakiuchi and Kiyoshi Yasutake
Study of Effects of Metal layer on hydrogen desorption from hydrogenated amorphous silicon using temperature programmed desorption
2005 International Conference on Solid State Devices and Materials, Kobe, Japan, 760-761, (2005).
Y.Ichii, Y.Mori, H.Hirose, K.Endo, K.Yamauchi, K.Yagi and H.Goto
Electrochemical Etching Using Surface Modified Graphite Electrodes in Ultrapure Water
Proceedings of ACEC2005 (The 5th Asian Conference on Electrochemistry), Shanghai, China, 1P14, (2005).
Tomoya Ono and Kikuji Hirose
First-principles study of electron-conduction property of nanostructures
Computational Nanomaterials Design Collaboration EU-Japan, Lyon, France, , (2005).
Y. Egami, T. Sasaki, T. Ono, and K. Hirose
Magnetic orderings in Al nanowires suspended between electrodes
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM'05), Sapporo, Japan, Mon-Pos-83, (2006).
K. Yamamura, Y. Sano, M. Shibahara, K. Yamauchi, H. Mimura, K. Endo
Ultra precision machining utilizing numerically controlled scanning of localized atmospheric pressure plasma
Proc. ICRP6/SPP23, Sendai, Japan, 81-82, (2006).
K. Kato, K. Yamamura, Y. Sano, M. Shibahara, K. Endo, and Y. Mori
High spatial resolution machining utilizing atmospheric pressure plasma - machining characteristics of silicon -
Proc. ICRP6/SPP23, Sendai, Japan, 363-364, (2006).
Kenta Arima and Katsuyoshi Endo
Atomic-scale Control of Semiconductor Surfaces in Aqueous Environment for Nano-scale Devices
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, 22-23, (2006).
Takaaki Hirokane, Satoru Morita, Tatsuya Takegawa, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
Development of Characterization Methods of Biomolecules by Semiconductor Devices
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, 25-26, (2006).
Katsuhiro Hashimoto, Yasufumi Ochi, Takaaki Hirokane, Shigeki Kawakami, Susumu Uchiyama, Kiichi Fukui, Kenta Arima, Junichi Uchikoshi and Mizuho Morita
Current-Voltage Characteristics of Gap Electrodes with λDNA Molecules after Elongating Treatment
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, 68-69, (2006).
Kenji Hiwa, Ryoji Nakaoka, Mizuho Morita and Kenta Arima
Development of Surface Hall Potentiometry to Characterize Semiconductor Films
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, 91-92, (2006).
Junichi Uchikoshi, Amane Tsuda, Noritaka Ajari, Taichiro Okamoto, Akihiro Funamoto, Kenta Arima, and Mizuho Morita
Nano-Flatness Measurements of Silicon Mirrors by Near-Infrared Ray Interferometry
ABSTRACTS of Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, 126-127, (2006).
Kenta Arima, Kazuto Yamauchi, Hidekazu Mimura, Akihisa Kubota, Kouji Inagaki, Yuzo Mori, and Katsuyoshi Endo
Atomic-level STM analyses of Si(001) surfaces prepared in aqueous environment
Abstract Book of 33rd Conference on the Physics & Chemistry of Semiconductor Interfaces, Florida, USA, Mo1355, (2006).
Y,Kuwahara and A.Saito
Development of Noble Methods of Nanoscale Functional Analysis
Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, p.24, (2006).
Y.Ichii and H.Goto
Development of Low-emission Chemical Etching Method for Nano-structure Fabrication on Silicon
Handai Nanoscience and Nanotechnology International Symposium Abstracts, Osaka University, Japan, 95, (2006).
K. Hirose and T. Ono
Theoretical Calculations of Electron-Conduction Properties for Nanoscale Structures
Handai Nanoscience and Nanotechnology International Symposium Abstracts, Osaka University, Japan, 21, (2006).
Hiromasa Ohmi, Hiroaki Kakiuchi, Kenichi Nishijima, Heiji Watanabe, Kiyoshi Yasutake
low temperature crystallization of amorphous silicon by atmospheric pressure plasma treatment in H2/He or H2/Ar mixtures
Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima, Japan, 67-68, (2006).
Hiroaki Kakiuchi, Hiromasa Ohmi, Ryota Nakamura, Masatoshi Aketa, Kiyoshi Yasutake, Kumayasu Yoshii, Yuzo Mori
Deposition Characteristics of Polycrystalline Silicon Carbide Films Prepared at High-Rates by Atmospheric Pressure Plasma CVD
Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima, Japan, 111-112, (2006).
Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshiki Ogiyama, Heiji Watanabe, Kiyoshi Yasutake
Characterization of high pressure (200-760Torr), stable glow plasma of pure hydrogen by measuring etching properties of Si and optical emission spectroscopy
Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima, Japan, 301-302, (2006).
Hiromasa Ohmi, Hiroaki Kakiuchi, Naotaka Tawara, Takuya Wakamiya, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake
Low-temperature Growth of Epitaxial Silicon films by Atmospheric Pressure Plasma Chemical Vapor Deposition
Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima, Japan, 625-626, (2006).
T. Hasegawa, A. Oda, T. Kimura, Y. Oshikane
Influence of Gas Temperature on Discharge Properties of Atmopsheric Pressure and Radio Frequency Discharge Plasmas in helium
Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima, Sendai, JAPAN, 273-274, (2006).
Y. Oshikane, K. Yamamura, H. Kakiuchi, A. Oda, C. Western, A. Nagao, K. Endo
Spectroscopic Study of Rotational Structures in Electronic Band Spectra Emitted by Diatomic Molecules in Capacitively Coupled Atmospheric CVM and CVD Plasmas Driven at 150 MHz
Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima, Sendai, JAPAN, 743-744, (2006).
Y. Sano, M. Watanabe, K. Yamamura, K. Yamauchi, T. Ishida, K. Arima, A. Kubota,
and Y. Mori
Polishing characteristics of silicon carbide by plasma chemical vaporization
machining
Proc. ICRP-6/SPP-23, 303-304 (January 24-27, 2006, Matsushima, Japan).
Y. Sano, K. Yamamura, H. Mimura, K. Yamauchi, A. Kubota, and Y. Mori
Cutting of functional materials by plasma chemical vaporization machining with
inner-diameter blade electrode
Proc. ICRP-6/SPP-23, 305-306 (January 24-27, 2006, Matsushima, Japan).
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H. Kakiuchi, H. Ohmi, Y. Nakahama and K. Yasutake
Influence of Gas Composition on the Structure of Silicon Nitride Films Prepared at High Rates by Atmospheric Pressure Plasma CVD
8th Asia-Pacific Conference on Plasma Science and Technology, Cairns, Australia, , (2006).
H. Ohmi, H. Kakiuchi, Y. Nakahama, Y. Ebata, K. Yasutake, K. Yoshii, and Y. Mori
Influences of substrate and its temperature on the structure of polycrystalline Si films deposited by atmospheric pressure plasma chemical vapor deposition
8th Asia-Pacific Conference on Plasma Science and Technology, Cairns, Australia, , (2006).
H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka and K. Yasutake
High-Rate Deposition and Characterization of Microcrystalline Silicon Films prepared by Atmospheric Pressure Plasma CVD
Proc. of 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, pp. 1582-1586, (2006).
H. Ohmi, K. Kishimoto, Y. Hamaoka, Y. Ogiyama, H. Kakiuchi and K. Yasutake
Preparation of Poly-Si Films by Atmospheric Pressure Plasma Enhanced Chemical Transport
21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, , (2006).
H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa and K. Yasutake
Characterization of Silicon Carbide Layers Formed by Atmospheric Pressure Plasma Carbonization of Silicon
Proc. of International Symposium on Dry Process (DPS 2006), Nagoya, Japan, pp. 33-34, (2006).
Y. Ogiyama, H. Ohmi, K. Kishimoto, H. Kakiuchi and K. Yasutake
Atmospheric Pressure Plasma Sterilization with Water Micro-Mist
Proc. of International Symposium on Dry Process (DPS 2006), Nagoya, Japan, pp. 175-176, (2006).
K. Yasutake, H. Watanabe, H. Ohmi and H. Kakiuchi
Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates
Meeting Abst. MA2006-02 Joint Int. Meeting of 210th Meeting of The Electrochemical Society and XXI Congreso de la Sociedad Mexicana de Electroquimica, Cancun, Mexico, p.1575, (2006).
N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, Japan, pp.1094-1095, (2006).
N. Ajari, J. Uchikoshi, A. Tsuda, T. Okamoto, T. Hirokane, A. Funamoto, K. Arima and M. Morita
Absolute line profile measurements of plane silicon mirrors with an anti-reflection film using near-infrared ray interferometry
PROGRAM and ABSTRACTS of Second International Symposium on Standard Materials And Metrology for Nanotechnology, Tokyo, Japan, 25, (2006).
Y. Hidaka, K. Hiwa, M. Morita and K. Arima
Line profile measurement of surface Hall potentials on Si samples
PROGRAM and ABSTRACTS of Second International Symposium on Standard Materials And Metrology for Nanotechnology, Tokyo, Japan, 26, (2006).
N. Ajari, J. Uchikoshi, T. Hirokane, K. Arima and M. Morita
Characterization of Void in BOnded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, Japan, 486-487, (2006).
H. Hashimoto, R. Yamada, K. Arima, J. Uchikoshi and M. Morita
Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, Japan, 860-861, (2006).
T. Hirokane, H. Hashimoto, D. Kanzaki, T. Takegawa, S. Morita, S. Urabe, K. Arima, J. Uchikoshi and M. Morita
Liquid Sensing by Nano-Gap Device with Treated Surface
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, Japan, 900-901, (2006).
K. Hashimoto, T. Hanada, Y. Ochi, T. Hirokane, S. Kawakami, S. Uchiyama, K. Fukui, K. Arima, J. Uchikoshi and M. Morita
Current-Voltage Characteristics of Gap Electrodes with lambda DNA Molecules on SiO2-Si Substrate after Elonging Treatment
Meeting Abstracts of The Electrochemical Society 602, Cancun, Mexico, 2099, (2006).
R. Yamada, H. Hashimoto, K. Arima, J. Uchikoshi and M. Morita
Photodetective Characteristics of Grid Gate Metal-Oxide-Semiconductor Tunneling Structures with Different Oxide Thickness
Meeting Abstracts of The Electrochemical Society 602, Cancun, Cancun, Mexico, 1249, (2006).
T. Hirokane, H. Hashimoto, D. Kanzaki, S. Urabe and M. Morita
Metal-Gap-Semiconductor Sensing Devices for DNA solutions
Meeting Abstracts of The Electrochemical Society 602, Cancun, Cancun, Mexico, 1185, (2006).
T. Shigetoshi, K. Arima, H. Inoue, T. Kawashima, T. Hirokane, T. Kataoka and M. Morita
Profile Measurements of Mico-Scratches Remaining on Polished Si(001) Wafers
Meeting Abstracts of The Electrochemical Society 602, Cancun, Cancun, Mexico, 1163, (2006).
K. Arima and K. Yamauchi
Formation of Atomically Flat 4H-SiC(0001) Surfaces by Wet-chemical Preparations
Abstracts of Handai Nanoscience and Nanotechnology International Symposium 2006, Osaka, Japan, 31-32, (2006).
Yasushi Oshikane, Hiroaki Kakiuchi, Kazuya Yamamura, Kiyoshi Yasutake, Takafumi Karasawa, Colin M. Western, Akinori Oda, Katsuyoshi Endo
Rotational and vibrational temperature of Fulcher-a band emitted by hydrogen molecules in capacitive VHF CVD plasma process at atmosphere
Abstractbook of the 8th Asia-Pacific Conference on Plasma Science and Technology (8th APCPST, Cairns, Australia), Carins, Austlaria, 269, (2006).
Yasushi Oshikane, Kazuya Yamamura, Koji Ueno, Hiroaki Kakiuchi, Kiyoshi Yasutake, Takafumi Karasawa, Colin M. Western, Akinori Oda, Akihiko Nagao, Katsuyoshi Endo
N2 C3Pu-B3Pg band spectroscopy in open-air type CVM plasma with He/CF4/O2 and H2 Fulcher-a band spectroscopy in atmospheric He/H2/SiH4 CVD plasma
Europhysics Conference Abstract of 18th Europhysics Conference on the Atomic and Molecular Physics of Ionised Gases (18th ESCAMPIG, Lecce, Italy), Lecce, Italy, 395-396, (2006).
A. Saito, Y. Miyamura, M. Nakajima, Y. Ishikawa, K. Sogo, Y. Hirai
Morpho blue reproduced by nanocasting lithography
SPIE Optics & Photonics 2006, California, USA, 63270Z 1- 9, (2006).
Y. Kuwahara, M. Akai-Kasaya, K. Takami, A. Saito, M. Aono
Electron Transport Property in Organic Molecular Wires
TNT2006 "Trends in Nanotechnology", Grenoble, France , (2006).
A.Saito, K.Takahashi, Y.Takagi, K.Kitamoto, K.Hanai, Y. Tanaka, D.Miwa, M.Yabashi, S.Shin, T.Ishikawa, Y.Kuwahara, M.Aono
Scanning Tunneling Microscopy for Nanoscale Surface Chemical Analysis based on Synchrotron Radiation
The tenth ISSP International Symposium (ISSP-10) on Nanoscience at Surfaces, Chiba, Japan, p. 62, (2006).
T. UEMURA, T. NAKANO, M. AKAI-KASAYA, A. SAITO, M. AONO AND Y. KUWAHARA
Tunneling-current-induced and plasmon-enhanced fluorescencefrom copper phthalocyanine thin films
International Conference on Nanoscience and Technology, NANO9 and STM’06, Basel, Switzerland, p.181, (2006).
M. Akai-Kasaya, N. Ohgami, M. Aono, Y. Kuwahara
Electrical Transport through Polydiacetylene Wires Using Nanogap Flat Electrodes
International Conference on Nanoscience and Technology, NANO9 and STM’06, Basel, Switzerland, p.110, (2006).
T. UEMURA, T. NAKANO, M. AKAI-KASAYA, A. SAITO, M. AONO AND Y. KUWAHARA
PLASMON-ENHANCED FORBIDDEN FLUORESCENCE FROM COPPER PHTHALOCYANINE THIN FILMS INDUCED BY A SCANNING TUNNELING MICROSCOPE
4th International Workshop on NanoscaleSpectroscopy and Nanotechnology 4th International Workshop on NanoscaleSpectroscopy and Nanotechnology, Rathen, Germany, p.12, (2006).
Y. Kuwahara, M. Akai-Kasaya, K. Takami1, A. Saito, and M. Aono
CONTROL OF ELECTRON TRANSPORT PROPERTY IN A POLYDIASETYLENE MOLECULAR WIRE
4th International Workshop on NanoscaleSpectroscopy and Nanotechnology 4th International Workshop on NanoscaleSpectroscopy and Nanotechnology, Rathen, Germany, P.11, (2006).
K. Takahashi, A. Saito, Y. Takagi, K. Hanai, H. Hosokawa, Y. Tanaka, D. Miwa, M. Yabashi, S. Shin, T. Ishikawa, Y. Kuwahara, M. Aono
Scanning Tunneling Microscope combined with Hard X-ray Micro-beam from 27m Long Undulator
The 7th Japan-Korea-Taiwan Symposium on Strongly Correlated Electron Systems, Hyogo, Japan,, D-1, (2006).
A.Saito, K.Takahashi, Y.Takagi, K.Hanai, H.Hosokawa, Y.Tanaka, D.Miwa, M.Yabashi, S.Shin, T.Ishikawa, Y.Kuwahara, M.Aono
Nanoscale Surface Analysis using Scanning Tunneling Microscope combined with SR-based Hard X-ray Micro-beam
The 7th Japan-Korea-Taiwan Symposium on Strongly Correlated Electron Systems, Hyogo, Japan,, D-2, (2006).
Y. Kuwahara, M. Akai-Kasaya, A. Saito, M. Aono
Electron Transport Property in Organic Molecular Wires
Handai Nanoscience and Nanotechnology International Symposium 2006, Osaka, Japan, P-2-1, (2006).
T. UEMURA, T. NAKANO, M. AKAI-KASAYA, A. SAITO, M. AONO AND Y. KUWAHARA
A Study of Upconversion Fluorescence in Phthalocyanine Molecules Using a Scanning Tunneling Microscopy
Handai Nanoscience and Nanotechnology International Symposium 2006, Osaka, Japan, P-2-15, (2006).
K. Yamauchi, H. Mimura, S. Matsuyama, H. Yumoto, S. Handa, K. Yamamura, Y. Sano, K. Endo, Y. Mori, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa
Hard X-ray Focusing less than 50nm for Nanoscopy/spectroscopy
SRI2006(The Ninth International Conference on Synchrotron Radiation Instrumentation), Daegu, Korea , (2006).
K. Yamauchi, H. Mimura, S. Matsuyama, H. Yumoto, S. Handa, Y. Sano, K. Yamamura, K. Tamasaku, Y. Nishino, M. Yabashi, T. Ishikawa
Diffraction-limited X-ray nanobeam with KB mirrors
ERL X-ray Science Workshops 6, Workshop on New Science Opportunities with Nanometer-Sized X-Ray Beams, Ithaca, NewYork, USA , (2006).
K. Yamauchi
Elastic Emission Machining for the Fabrication of X-ray and EUV Mirrors
OSA Optical Fabrication and Testing Topical Meeting, Rochester, NewYork, USA , (2006).
Yasuhisa Sano, Kazuya Yamamura, Hidekazu Mimura, Kazuto Yamauchi, Akihisa Kubota and Yuzo Mori
Fabrication of ultra thin and highly uniform silicon-on-insulator by numerically
controlled plasma chemical vaporization machining
8th Asia-Pacific Conference on Plasma Science and Technology
and 19th Symposium on Plasma Science for Materials (APCPST-8/SPSM-19), Cairns, Australia, 90, (2006).
Yasuhisa Sano, Masayo Watanabe, Kazuya Yamamura, Kazuto Yamauchi,
Takeshi Ishida, Kenta Arima, Akihisa Kubota and Yuzo Mori
Polishing characteristics of 4H-SiC Si-face and C-face by plasma chemical
vaporization machining
Programme of The 6th European Conference on Silicon Carbide and Related
Materials (ECSCRM 2006), Newcastle upon Tyne, UK, 34, (2006).
H. Mimura, H. Yumoto, S. Matsuyama, K. Yamamura, Y. Sano, K. Endo, Y. Mori, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa, and K. Yamauchi
Development of Surface Measurement Technologies for Hard X-ray Nanofocusing Mirror at Osaka University and SPring-8
The 3rd International Workshop on Metrology for X-ray Optics, Daegu, Korea, E-14, (2006).
H. Mimura and K. Yamauchi
Hard X-ray nano-focusing with ultraprecisely figured mirrors
The 10th Three-Way Meeting, ESRF, Grenoble, France , (2006).
H. Mimura, H. Yumoto, S. Matsuyama, S. Handa, Y. Sano, K. Yamamura, K. Tamasaku, Y. Nishino, M. Yabashi, T. Ishikawa, K. Yamauchi
Hard X-ray focusing with a beam size less than 30 nm by total reflection mirror
ERL X-ray Science Workshops 6, Workshop on New Science Opportunities with Nanometer-Sized X-Ray Beams, Ithaca, NewYork, USA , (2006).
H. Mimura, S. Matsuyama, H. Yumoto, S. Handa, A. Shibatani, K. Katagishi, Y. Sano, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa, and K. Yamauchi
Waveoptical simulation for designing and evaluating hard X-ray nanofocusing mirror
Optics & Photonics 2006, San Diego, California, USA, Proc. SPIE Vol.6317, 631718 (2006), (2006).
Y. Ichii, and H. Goto
Development of Low-emission MEMS Process
4th ISE(The International Society of Electrochemistry) Spring Meeting 2006, Singapore, p.167, (2006).
Satoshi Matsuyama, Hidekazu Mimura, Hirokatsu Yumoto, Soichiro Handa,Keiko Katagishi, Akihiko Shibatani, Kazuya Yamamura, Yasuhisa Sano,Yoshinori Nishino, Kenji Tamasaku, Makina Yabashi, Tetsuya Ishikawa and Kazuto Yamauchi
Development of K-B Mirror Manipulator for Hard X-ray Sub-50nm Focusing
International Workshop on Mechanical Engineering Design of Synchrotron Radiation Equipment and Instrumentation 2006 (MEDSI2006), Hygo, Japan, , (2006).
Satoshi Matsuyama, Hidekazu Mimura, Hirokatsu Yumoto, Keiko Katagishi, Soichiro Handa, Akihiko Shibatani, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori, Yoshinori Nishino, Kenji Tamasaku, Makina Yabashi, Tetsuya Ishikawa and Kazuto Yamauchi
Development of a Scanning X-ray Fluorescence Microscope Using Size-Controllable Focused X-ray Beam from 50 to 1500nm
The 9th International Conference on Synchrotron Radiation Instrumentation (SRI 2006), Deagu, Korea, , (2006).
Satoshi Matsuyama, Hidekazu Mimura, Mari Shimura, Hirokatsu Yumoto, Keiko Katagishi, Soichiro Handa, Akihiko Shibatani, Yasuhis Sano, Kazuya Yamamura, Yoshinori Nishino, Kenji Tamasaku, Makina Yabashi, Tetsuya Ishikawa and Kazuto Yamauchi
High-spatial-resolution scanning X-ray fluorescence microscope with Kirkpatrick-Baez mirrors
Proc. SPIE 6317, San Diego, USA, 631719, (2006).
Keiko Katagishi, Satoshi Matsuyama, Hidekazu Mimura, Mari Shimura, Hirokatsu Yumoto1, Soichiro Handa, Akihiko Shibatani, Yasuhisa Sano, Kazuya Yamamura, Yoshinori Nishino, Kenji Tamasaku, Makina Yabashi, Tetsuya Ishikawa and Kazuto Yamauchi
Observation of Intracellular Elements by Scanning X-ray Fluorescence Microscopy with Spatial Resolution of 50nm
The 16th International Microscopy Congress (IMC16), Sapporo, Japan, , (2006).
Satoshi Matsuyama, Hidekazu Mimura, Mari Shimura, Hirokatsu Yumoto, Keiko Katagishi, Soichiro Handa, Akihiko Shibatani, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori, Yoshinori Nishino, Kenji Tamasaku, Makina Yabashi, Tetsuya Ishikawa and Kaz
Scanning X-ray Fluorescence Microscope Using Kirkpatrick-Baez Optics with Spatial Resolution Better than 50nm
The 16th International Microscopy Congress (IMC16), Sapporo, Japan, , (2006).
Hirokatsu Yumoto, Hidekazu Mimura, Satoshi Matsuyama, Soichiro Handa, Akihiko Shibatani, Keiko Katagishi, Kazuya Yamamura, Yasuhisa Sano, Katsuyoshi Endo, Yuzo Mori, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, and Kazuto Yamauchi
Fabrication of X-ray Mirror for Hard X-ray Diffraction Limited Nanofocusing
SRI2006(The Ninth International Conference on Synchrotron Radiation Instrumentation), Daegu, Korea, EP-095, (2006).
Hirokatsu Yumoto, Hidekazu Mimura, Satoshi Matsuyama, Soichiro Handa, Akihiko Shibatani, Keiko Katagishi, Yasuhisa Sano, Makina Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, and Kazuto Yamauchi
At-wavelength figure metrology of total reflection mirrors in hard x-ray region
SPIE, San Diego, California USA, 631709, (2006).
Hirokatsu Yumoto, Hidekazu Mimura, Satoshi Matsuyama, Souichiro
Handa, Kazuya Yamamura, Yasuhisa Sano, Katsuyoshi Endo, Yuzo Mori, Makina
Yabashi, Yoshinori Nishino, Kenji Tamasaku, Tetsuya Ishikawa, and Kazuto
Yamauchi
Fabrication of ultraprecisely figured mirror for nano focusing hard-x-ray
ICPE, Tokyo, Japan, 295-300, (2006).
H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K. Yagi, J. Murata and K. Yamauchi
Novel abrasive-free planarization of Si and SiC using catalyst
The 11th International Conference on Precision Engineering (ICPE), Tokyo, Japan, 267-270, (2006).
H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K. Yagi, J. Murata and K. Yamauchi
Damage-free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching
Programme of The 6th European Conference on Silicon Carbide and Related
Materials (ECSCRM 2006), Newcastle upon Tyne, UK, 28, (2006).
T. Ono and K. Hirose
Quantum transport through nanoscale contact
CompMag 2006 - Conference on Computational Magnetism and Spintronic, Juelich, Germany, O-I.3, (2006).
T. Ono and K. Hirose
First principles study on electron conduction through silicon oxide films sandwiched between electrode
The 9th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea, P1, (2006).
S. Aiba, Y. Egami, K. Hirose, and T. Ono
Electron transport properties of concavity-convexity jellium wires
The 9th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea, P5, (2006).
K. Iwami, H. Goto, K. Hirose, and T. Ono
First-principles electronic structure calculation of deformed carbon nanotubes
The 9th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea, P12, (2006).
K. Inagaki, N. Okada, T. Noda, K. Endo, and K. Hirose
Investigation of difference in optical response between (001) and (111) hydrogen-terminated silicon surfaces - Measurement and Calculation -
The 9th Asian Workshop on First-Principles Electronic Structure Calculations, Seoul, Korea, P62, (2006).
Y. Naitou, A. Ando, H. Ogiso, H. Watanabe, K. Yasutake
Dopant Concentration Influence on Scanning Capacitance Microscopy Imaging in Ultrathin SiO2 Films
Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology, Kanagawa, Japan, pp.21-22, (2006).
Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, and Kiyoshi Yasutake
Oxidation Saturation of SiGe Alloy on Silicon-on-insulator Wafers
SiGe and Ge: Materials, Processing, and Devices, Cancun, Mexico, 1033-1037, (2006).
Takayoshi Shimura, Eiji Mishima, Heiji Watanabe, and Kiyoshi Yasutake
Application of Synchrotron X-ray Diffraction Methods to Thin Film Materials used in Semiconductor Devices
Extended Abstract of International Meeting for Future of Electron Devices, Kansai, Kyoto, Japan, 25-26, (2006).
Heiji Watanabe, Shigenari Okada, Hiromasa Ohmi, Hiroaki Kakiuchi and Kiyoshi Yasutake
Surface Cleaning and Etching of 4H-SiC(0001) using Atmospheric Pressure Hydrogen Plasma
Materials Research Society (MRS) Spring Meeting, San Francisco, CA. , (2006).
Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe and K. Yasutake
Spatial Fluctuation of Electrical Properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, Japan, pp.392-393, (2006).
H. Watanabe
Interface Engineering of High-k Gate Dielectrics for Advanced CMOS (INVITED)
Abstracts of Handai Nanoscience and Technology International Symposium, Osaka, Japan, pp.30, (2006).
Takayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, and Kiyoshi Yasutake
Structural Change of the Interfacial SiO2 Layer between HfO2 layers and Si Substrates
Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology, Kawasaki, Japan, 53-54, (2006).
Yuichi Takaie, Katsuyoshi Endo, Kazuto Yamauchi, Kazuya Yamamura, Yasuhisa Sano, Yuzo mori, Yasuo Higashi, Tatsuya Kume, Kazuhiro Enami, Kenji Ueno
Surface Gradient Integrated Profiler for X-ray and EUV optics
The 9th International Conferenceon Synchrotron Radiation Instrumentation, Daegu, Korea, , (2006).
Kazuya Yamamura, Masafumi Shibahara, Yasuhisa Sano, Yuzo Mori
Ultraprecision Finishing Process for Improving Thickness Distribution of Quartz Crystal Wafer by Utilizing Atmospheric Pressure Plasma
2006 IEEE International Frequency Control Symposium, Florida, USA, 848-851, (2006).
Kazuya Yamamura, Koji Ueno, Yasuhisa Sano, Yasushi Oshikane, Masafumi Shibahara, Yuzo Mori
Machining characteristics of AT cut quartz crystal wafer by open-air type atmospheric pressure plasma machining system
8th Asia-Pacific Conference on Plasma Science and Technology
and 19th Symposium on Plasma Science for Materials, Cairns, Australia, 190, (2006).
Kazuya Yamamura, Koji Ueno, Yasushi Oshikane, Yasuhisa Sano, Masafumi Shibahara, Yuzo Mori
Plasma diagnostics by optical emission spectroscopy in the atmospheric pressure
plasma etching process
8th Asia-Pacific Conference on Plasma Science and Technology
and 19th Symposium on Plasma Science for Materials, Cairns, Australia, 191, (2006).
Kazuya Yamamura, Akihiro Fujiwara, Koji Ueno, Yasuhisa Sano, Masafumi Shibahara, Katsuyoshi Endo, Yuzo Mori
Ultraprecision finishing of photomask substrate by utilizing atmospheric pressure plasma
11th International Conference on Precision Engineering, Tokyo, Japan, 227-231, (2006).
Masafumi Shibahara, Yusuke Yamamoto, Kazuya Yamamura, Yasuhisa Sano, Katsuyoshi Endo, Yuzo Mori
Development of ultraprecision finishing method for quartz crystal wafer utilizing atmospheric pressure plasma
11th International Conference on Precision Engineering, Tokyo, Japan, 233-237, (2006).
Y. Higashi, Y. Takaie, K. Endo, T. Kume, K. Enami, K. Yamauchi, K. Yamamura, Y. Sano, J. Uchikoshi, K. Ueno, Y. Mori
Surface gradient integrated profiler for x-ray and EUV optics: 3D mapping of 1m-long flat mirror and off-axis parabolic mirror
SPIE, San Diego, USA, 63170B, (2006).
S. Horie, T. Minami, N. Kitano, M. Kosuda, H. Watanabe, K. Yasutake
Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks
2006 International Conference on Solid State Devices and Materials, Yokohama, Japan, P1-7, (2006).
Kazuya Yamamura
Development of Numerically Controlled Local Wet Etching
Optical Fabrication and Testing 2006, New York, USA, OFME2, (2006).
Kazuya Yamamura, Akihiro Fujiwara, Koji Ueno, Yasuhisa Sano, Masafumi Shibahara, Katsuyoshi Endo, Yuzo Mori
Development of ultraprecision numerically controlled finishing machine utilizing atmospheric pressure plasma
8th International Conference on Progress of Machining Technology, Matsue, Japan, 253-256, (2006).
Kazuya Yamamura, Kunihito Kato, Yasuhisa Sano, Masafumi Shibahara, Katsuyoshi Endo, Yuzo Mori
High spatial resolution machining utilizing atmospheric pressure plasma machining
8th International Conference on Progress of Machining Technology, Matsue, Japan, 257-260, (2006).
Kazuya Yamamura, Koji Ueno, Akihiro Fujiwara, Yasuhisa Sano
, Yasusi Oshikane, Masafumi Shibahara, Katsuyoshi Endo, Yuzo Mori
Machining characteristics of ultraprecision atmospheric pressure plasma process
8th International Conference on Progress of Machining Technology, Matsue, Japan, 265-268, (2006).
Kazuya Yamamura, Masafumi Shibahara, Yasuhisa Sano, Yusuke Yamamoto, Tetsuya Morikawa and Yuzo Mori
Improvement of the Thickness Distribution of AT Cut Quartz Crystal Wafer by Open-air Type Plasma Chemical Vaporization Machining
Handai Nanoscience and Nanotechnology International Symposium, Osaka, Japan, 74, (2006).
Kazuya Yamamura, Koji Ueno, Yasushi Oshikane, Yasuhisa Sano, Masafumi Shibahara, Yuzo Mori
Measurement of rotational and vibrational temperature of gas molecule in the open-air type PCVM plasma by using spatial resolved emission spectra
28th International Symposium on Dry Process, Nagoya, Japan, 49-50, (2006).
Kazuya Yamamura
Numerically Controlled Local Wet Etching For Fabricating the Ultraprecision Optics
5th International Conference on Optics-photonics Design & Fabrication, Nara, Japan, 257-258, (2006).
H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka and K. Yasutake
High-rate Deposition of Microcrystalline Silicon Film at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 1.4, (2006).
H. Ohmi, Y. Hamaoka, Y. Ogiyama, H. Kakiuchi and K. Yasutake
Development of Atmospheric Pressure Plasma Enhanced Chemical Transport toward Eco-friendly Manufacturing
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 1.5, (2006).
K. Yamamura
Development of Numerically Controlled Local Wet Etching
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 2.3, (2006).
H. Yumoto, H. Mimura, S. Matsuyama, S. Handa, A. Shibatani, K. Katagishi, Y. Sano, K. Yamamura, Y. Mori, K. Tamasaku, M. Yabashi, Y. Nishino, T. Ishikawa and K. Yamauchi
Fabrication Technology of Total Reflection Mirrors to Realize Hard-x-ray Sub-30-nm Focusing
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 2.4, (2006).
S. Matsuyama, H. Mimura, H. Yumoto, Y. Sano, K. Yamamura, K. Endo, Y. Mori, M. Yabashi, Y. Nishino, K. Tamasaku, T. Ishikawa and K. Yamauchi
Development of Scanning X-ray Fluorescencs Microscope with Spatial Resolution Better Than 30nm Using K-B Mirror Optics
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 2.5, (2006).
Y. Sano, T. Masuda, H. Mimura and K. Yamauchi
Development of Numerically Controlled Sacrificed Oxidation Using Atmospheric Pressure Plasma
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 3.2, (2006).
Y. Ichii and H. Goto
Fabrication of Flat Silicon Surfaces Using Eco-friendly Electrochemical Etching Process on Cathode
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 3.3, (2006).
H. Hara, Y. Sano, K. Arima, K. Yagi, J. Murata, A. Kubota, H. Mimura and K. Yamauchi
Development of CAtalyst-Referred Etching
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 3.4, (2006).
K. Inagaki, N. Okada, T. Noda, K. Endo and K. Hirose
First-principles analysis of the difference of reflectance spectra between the (001) and the (111) hydrogenated silicon surface
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 4.5, (2006).
H. Nakayama, T. Ono, H. Goto and K. Hirose
Electronic Structures of Peanut-shaped Fullerene Tubes
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 4.6, (2006).
Y. Kuwahara, M. Akai-kasaya, T. Uemura, A. Saito and M. Aono
Development of Noble Methods for Nanoscale Functional Analysis
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 5.4, (2006).
Y. Oshikane, H. Kakiuchi, K. Yamamura, C.M. Western, K. Yasutake and K. Endo
Ro-vibronic Structure in the Q-branch in the Spectra of Hydrogen Fulcher-α Band Emission in the Atmospheric Pressure Plasma CVD Process Driven at 150 MHz
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 5.5, (2006).
T. Shimura, E. Mishima, K. Kawamura, H. Watanabe and K. Yasutake
Structural Change of the Thermal Oxide Layer on Si Substrates by Diffusion of Atomic Oxygen
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 6.4, (2006).
K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe and K. Yasutake
Fabrication of Polycrystalline Silicon Thin Films on Glass Substrates Using Ge Naono-islands as Nuclei
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P3, (2006).
N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake
Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P5, (2006).
R. Nakamura, H. Kakiuchi, H. Ohmi, M. Aketa, K. Yasutake, K. Yoshii and Y. Mori
Deposition Characteristics of Polycrystalline Silicon Carbide Films Prepared at High-rates by Atmospheric Pressure Plasma CVD
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P6, (2006).
K. Kishimoto, D. Kamada, H. Ohmi, H. Kakiuchi and K. Yasutake
Fabrication of Si1-xGex and SiC Films by Atmospheric Pressure Plasma Enhanced Chemical Transport
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P7, (2006).
M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe and K. Yasutake
Atmospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P8, (2006).
M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe and K. Yasutake
High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P9, (2006).
A. Kubota, K. Yagi, J. Murata, H. Hara, H. Yasui and K. Yamauchi
Fundamental Study on Catalyst-Assisted Chemical Polishing of 4H-SiC
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P11, (2006).
H. Mimura , H. Yumoto, S. Matsuyama, Y. Sano, K. Yamamura, Y. Mori, K. Tamasaku, M. Yabashi, Y. Nishino, T. Ishikawa and K. Yamauchi
Development of High-resolution Computer-controlled Figuring System and Application to X-ray Reflective Optics
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P12, (2006).
K. Yagi, J. Murata, H. Hara, Y. Sano, K. Yamauchi and H. Goto
Fabrication of Damascene Cu Wiring Using Solid Acid Catalyst
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P13, (2006).
M. Kanaoka, H. Takino, K. Nomura, Y. Mori, H. Mimura and K. Yamauchi
Removal Properties of Low-thermal-expansion Materials with Rotating-sphere Elastic Emission Machining
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P14, (2006).
T. Ono and K. Hirose
Theoretical Study on Electron Conduction throuth Nanostructures
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P19, (2006).
Y. Egami, T. Ono, H. Goto and K. Hirose
Study on Electron Conduction Properties of Nano-scale Structures by using First-principles Calculations
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P20, (2006).
T. Sasaki, T. Ono, H. Goto and K. Hirose
Order-N First-principles Calculations of the Electronic Properties of Semi-infinite Crystalline Hetero Interfaces
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P21, (2006).
J. Otsuka, T. Ono and K. Hirose
Ab initio Calculation of the Electronic Polarization of AlN Nanotubes
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P22, (2006).
K. Kutsuki, T. Ono and K. Hirose
First-principles Study on Electronic Structure of Si/SiO2 Interface -Effect of Interface Defects on Local Charge Density-
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P23, (2006).
K. Iwami, K. Hirose and T. Ono
First-principles Study of Electronic Structure of Deformed Carbon Nanotube
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P24, (2006).
S. Aiba, Y. Egami, K. Hirose and T. Ono
First-principles Study on Electron Conduction Property of 2D Jellium Nanowires
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P25, (2006).
Y. Higashi, Y. Takaie, K. Endo, Y. Mori, K. Yamauchi, T. Kume, K. Enami, K. Yamamura, Y. Sano and K. Ueno
Surface Gradient Integrated Profiler for X-ray and EUV Optics
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P26, (2006).
H. An, T. Nagata, K. Sugimoto, K. Endo and Y. Mori
Development of a Measuring Instrument for Nanoparticle on the Si Wafer Using a Light Scattering Method
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P28, (2006).
K. Inagaki, N. Okada, T. Noda, K. Hirose and K. Endo
Development of High-precision Differential Reflectance Spectrometer and Its Application to Analysis of Initial Stage of Silicon Native Oxidation
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P29, (2006).
Y. Oshikane, T. Kataoka, M. Okuda, S. Hara, H. Inoue and M. Nakano
Observation of Nano-structure by SNOM with Small Sphere Probe
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P30, (2006).
S. Okagaki and T. Nakamura, T. Matsuura, Y. Oshikane, T. Kataoka, H. Inoue and M. Nakano
Absolute Surface Profiling of Large Diameter Mirror by Point Diffraction Interferometer
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P31, (2006).
K. Miyaji, H. Inoue, T. Kataoka, M. Nakano and Y. Oshikane
Detection of Nano-particles and Nano-steps by White Light Scattering
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P32, (2006).
R. Okamoto, K. Arima, H. Hara, Y. Sano, T. Ishida, K. Yagi, A. Kubota, K. Endo and K. Yamauchi
Scanning Tunneling Microscopy Study of 4H-SiC(0001) Surfaces after Wet-chemical Preparations
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P33, (2006).
N. Ajari, J. Uchikoshi, A. Tsuda, A. Funamoto, K. Arima and M. Morita
Absolute Straightness Measurements of Plane Silicon Mirrors with Wedge by Near-infrared Ray Interferometry
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P34, (2006).
Y. Hidaka, K. Hiwa, M. Morita and K. Arima
Development of Surface Hall Potentiometry for Characterizing Semiconductor Materials
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P35, (2006).
T. Uemura, T. Nakano, M. Akai-Kasaya, A. Saito, M. Aono and Y. Kuwahara
Tunneling-current-induced and Plasmon-enhanced Fluorescence from Copper Phthalocyanine Thin Films
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P36, (2006).
T. Yoshikawa, Y. Otani, M. Nakano, T. Kataoka, H. Inoue and Y. Oshikane
Development of High Performance EUV Light Source by Laser Produced Plasma -Target Design and Evaluation of EUV Conversion Efficiency-
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P37, (2006).
A. Funamoto, S. Lee, Y. Kawabata, M. Ohira, D. Uchida, S. Aoyama and M. Morita
Nano Hot Embossing Method with Curved Stage onto Light Guide
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P40, (2006).
T. Hirokane, H. Hashimoto, D. Kanzaki, S. Urabe and M. Morita
Metal-gap-semiconductor Device for Biosensors
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P41, (2006).
K. Hashimoto, T. Hanada, Y. Ochi, T. Hirokane, S. Kawakami, S. Uchiyama, K. Fukui, K. Arima, J. Uchikoshi and M. Morita
Current-voltage Characteristics of Gap Electrodes with Extended λDNA Molecules
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P42, (2006).
H. Hashimoto, R. Yamada, K. Arima, J. Uchikoshi and M. Morita
Photodetective Characteristics of Metal-oxide-semiconductor Tunneling Structure for Optoelectronics
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P43, (2006).
S. Yoshida, Y. Watanabe, Y. Kita, T. Shimura, H. Watanabe, K. Yasutake, Y. Akasaka, Y. Nara and K. Yamada
Interface Reactions at TiN/HfSiON Gate Stacks Depending on the Electrode Structure and Deposition Method
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P44, (2006).
S. Horie, T. Minami, N. Kitano, M. Kosuda, H. Watanabe and K. Yasutake
PVD-based In-situ Fabrication Method for Improving the Electrical Properties of Metal/High-k Gate Stacks
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P45, (2006).
K. Manabe, T. Hase, T. Tatsumi, H. Watanabe and K. Yasutake
Systematic Study on Effective Work Functions for Poly-Si and Fully Silicided NiSi Electrodes on Hf-based Gate Dielectrics
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P46, (2006).
Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe and K. Yasutake
The Origin of Long-range Contrast in Hf-silicate Film Observed by Scanning Capacitance Microscopy
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P47, (2006).
S. Horiuchi, M. Shimizu, T. Shimura, H. Watanabe and K. Yasutake
Oxidation Rate Diminishment of SiGe Epitaxial Films on Silicon-on-insulator Wafers
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, P48, (2006).
Kenta Arima and Mizuho Morita
Atomic-scale Characterization of Semiconductor Surfaces after Wet Cleaning
Extended Abstracts of International 21st Century COE Symposium on Atomistic
Fabrication Technology, Osaka, Japan, 6.5, (2006).
T. Uemura, T. Nakano, M. Akai-Kasaya, A. Saito, M. Aono and Y. Kuwahara
Plasmon-enhanced forbidden fluorescence from phthalocyanine molecules induced by a scanning tunneling microscope
14th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan., p29, (2006).
M. Akai-Kasaya, N. Ogami, A. Saito, M. Aono and Y. Kuwahara
Electrical Transport through Polydiacetylene Wires Using Nanogap Flat Electrodes
14th International Colloquium on Scanning Probe Microscopy, Shizuoka, Japan., p36, (2006).
A. SAITO
Mystery of Morpho Butterfly’s Blue -“structural color Based on Bio-nanostructures & its Applications-
The 7th Int. Symposium on biomimethic Materials Processing, Nagoya, Japan, p.8, (2006).
T. Ono and K. Hirose
First-Principles Analysis of Electron Conduction through SiO2 Films Suspended between Semi-Infinite Electrodes
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, O-4, (2006).
T. Sasaki, Y. Egami, T. Ono and K. Hirose
Order-N First-Principles Calculations in Inhomogeneous Semi-Infinite Systems
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, P-1, (2006).
J. Otsuka, T. Ono and K. Hirose
Electronic Polarization of Single-Walled AlN Nanotubes
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, P-5, (2006).
H. Goto and K. Hirose
A Path-Integration Calculation Method Based on the Real-Space Finite-Difference Scheme
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, P-13, (2006).
K. Inagaki, N. Okada, T. Noda, K. Endo and K. Hirose
Measurement and Calculation of Differential Reflectance Spectrum of Hydrogen-Terminated Silicon Surfaces Having Different Crystal Orientations
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, P-83, (2006).
S. Aiba, Y. Egami, T. Ono and K. Hirose
First-Principles Calculation of Transport Properties of 2-Dimensional Jellium Nanowaires
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, P-4, (2006).
Y. Egami, T. Sasaki, T. Ono and K. Hirose
Study on Scanning Tunneling Microscopy Images of C2H2 Adsorbed Si(001) Surface by First-Principles Calculation
International Conferemce on Quantum Simulators and Design, Hiroshima University, Japan, P-26, (2006).
T. Ono and K. Hirose
First-principles calculation for electron conduction properties using real-space finite-different method
Quantum Transport and non-adiabatic electron evolution from first principles approaches, CECAM, Lyon, France, , (2006).
H. Hirose
First-principles Calculations of Electron-Transport Properties of Nanostructures
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, T-2, (2007).
T. Sasaki, Y. Egami, T. Ono and K. Hirose
Order-N First-principles Calculations in Semi-Infinite Heterojunctions
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, P-03, (2007).
T. Ono and K. Hirose
First-principles Study on Electron Conduction through Thin Oxide Films
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, P-05, (2007).
J. Otsuka, T. Ono and K. Hirose
First-principles Calculation of the Electronic Polarization of Single-Walled AlN Nanotubes
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, P-07, (2007).
S. Aiba, Y. Egami, T. Ono and K. Hirose
First-principles Study of the Relationship between Geometric Structure and Conductance Oscillation in Nanowires
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, P-08, (2007).
K. Iwami, H. Goto, K. Hirose and T. Ono
Electronic Structures of Deformed (6,6) Carbon Nanotubes from First Principles
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, P-10, (2007).
Y. Egami, T. Sasaki, T. Ono and K. Hirose
First-principles Study on Scanning Tunneling Microscopy Images of C2H2 Adsorbed Si(001) Surface
International Symposium on Theories of Organic/Metal Interfaces 2007 (ISTOMI'07), Osaka University, Japan, P-12, (2007).
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